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Simulation of Semiconductor Processes and Devices 2001

SISPAD 01

  • Conference proceedings
  • © 2001

Overview

Editors:
  1. Dimitris Tsoukalas

    1. “Demokritos” National Center for Scientific Research, Institute of Microelectronics, Athens, Greece

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  2. Christos Tsamis

    1. “Demokritos” National Center for Scientific Research, Institute of Microelectronics, Athens, Greece

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    You can also search for this editor in PubMed   Google Scholar

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Table of contents (102 papers)

  1. Front Matter

    Pages i-xv
    Download chapter PDF

  2. Macroscopic Quantum Carrier Transport Modeling

    • Zhiping Yu, Robert W. Dutton, Danie W. Yergeau, Mario G. Ancona
    Pages 1-9

  3. Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication

    • M. Jaraiz, P. Castrillo, R. Pinacho, I. Martin-Bragado, J. Barbolla
    Pages 10-17

  4. Monte Carlo Impurity Diffusion Simulation Considering Charged Species

    • Masami Hane, Takeo Ikezawa, George H. Gilmert
    Pages 18-21

  5. A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism

    • D. Villanueva, P. Moens, K. Rajendran, W Schoenmaker
    Pages 22-25

  6. The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization

    • Luis A. Marqués, Lourdes Pelaz, Jesús Hernández, Juan Barbolla
    Pages 26-29

  7. Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon

    • F. Cristiano, B. Colombeau, C. Bonafos, J. Aussoleil, G. Ben Assayag, A. Claverie
    Pages 30-33

  8. Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach

    • G. Hobler, V. Moroz
    Pages 34-37

  9. Local Iterative Monte Carlo investigation of the influence of electron-electron scattering on short channel Si-MOSFETs

    • J. Jakumeit, U. Ravaioli
    Pages 38-41

  10. Simplified Inelastic Acoustic—Phonon Hole Scattering Model for Silicon

    • F. M. Bufler, A. Schenk, W. Fichtner
    Pages 42-45

  11. An Impact Ionization Model Including Non-Maxwellian And Non-Parabolicity Effects

    • T. Grasser, H. Kosina, S. Selberherr
    Pages 46-49

  12. Density of States and Group Velocity Calculations for SiO2

    • E. Gnani, S. Reggiani, M. Rudan
    Pages 50-53

  13. Investigation of Spurious Velocity Overshoot Using Monte Carlo Data

    • T. Grasser, H. Kosina, S. Selberherr
    Pages 54-57

  14. Elasto-Plastic Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Stresses in Advanced Silicon Technologies

    • Vincent Senez, Thomas Hoffmann
    Pages 58-61

  15. A Unified Model of Dopant Diffusion in SiGe.

    • Ardechir Pakfar, A. Poncet, T. Schwartzmann, H. Jaouen
    Pages 62-65

  16. A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex by Carbon Insertion

    • K. Rajendran, W. Schoenmaker
    Pages 66-69

  17. On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets

    • A. Burenkov, Y. Mu, H. Ryssel
    Pages 70-73

  18. Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi2

    • F. G. Lau, W. Molzer
    Pages 74-77

  19. Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs

    • S. Kaya, A. R. Brown, A. Asenov, D. Magot, T. LintonI
    Pages 78-81

  20. Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential

    • J. R. Watling, A. R. Brown, A. Asenov, D. K. Ferry
    Pages 82-85
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Keywords

About this book

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Editors and Affiliations

  • “Demokritos” National Center for Scientific Research, Institute of Microelectronics, Athens, Greece

    Dimitris Tsoukalas, Christos Tsamis

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