Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach
A new model is proposed for interstitial and vacancy profiles due to ion implantation. When used in TED simulations, more accurate results are obtained than with the “plus-factor” model. The user is not required to run Monte Carlo simulations nor to explicitly take spatial correlations between interstitials and vacancies into account. The model is formulated in terms of effective Frenkel pair numbers and vertical and lateral shift distances between interstitial and vacancy profiles. It is well suited for 1D/2D/3D process simulation.
KeywordsDopant Profile Versus Distribution Frenkel Pair Versus Profile Pair Recombination
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