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Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach

  • G. Hobler
  • V. Moroz

Abstract

A new model is proposed for interstitial and vacancy profiles due to ion implantation. When used in TED simulations, more accurate results are obtained than with the “plus-factor” model. The user is not required to run Monte Carlo simulations nor to explicitly take spatial correlations between interstitials and vacancies into account. The model is formulated in terms of effective Frenkel pair numbers and vertical and lateral shift distances between interstitial and vacancy profiles. It is well suited for 1D/2D/3D process simulation.

Keywords

Dopant Profile Versus Distribution Frenkel Pair Versus Profile Pair Recombination 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    G. Hobler, L. Pelaz, and C. S. Rafferty, J. Electrochem. Soc. 147(9), 3494–3501, 2000.CrossRefGoogle Scholar
  2. [2]
    M. D. Giles, J Electrochem. Soc. 138(4), 1160–1165, 1991.CrossRefGoogle Scholar
  3. [3]
    G. Hobler and V. Moroz, In ESSDERC 2000 pp. 168–171. Frontier Group, 2000.Google Scholar
  4. [4]
    L. Pelaz, G. H. Gilmer, H.-J. Gossmann, C. S. Rafferty, M. Jaraiz, and J. Barbolla,Appl. Phys. Lett. 74(24), 3657–3659, 1999.CrossRefGoogle Scholar
  5. [5]
    G. Hobler, L. Pelaz, and C. S. Rafferty, Nucl. Instr. Meth. B 153, 172–176, 1999.CrossRefGoogle Scholar
  6. [6]
    G. Hobler and S. Selberherr, IEEE Trans. Comp.-Aided Des. 7(2), 174–180, 1988.CrossRefGoogle Scholar
  7. [7]
    R. Kalyanaraman, T. E. Haynes, D. C. Jacobson, H.-J. Gossmann, and C. S. Rafferty, In Mat. Res. Soc. Symp. Proc. vol. 610, B9.4. MRS, Warrendale, 2000.Google Scholar
  8. [8]
    L. Laanab, C. Bergaud, M. M. Faye, J. Faure, A. Martinez, and A. Claverie, In Mat. Res. Soc. Symp. Proc. vol. 279, pp. 381–386. MRS, Pittsburgh, 1993.Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • G. Hobler
    • 1
  • V. Moroz
    • 2
  1. 1.Univ.of Technology ViennaViennaAustria
  2. 2.Avant! CorporationFremontLeuvenUAS

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