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Monte Carlo Impurity Diffusion Simulation Considering Charged Species

  • Masami Hane
  • Takeo Ikezawa
  • George H. Gilmert
Conference paper

Abstract

A Monte Carlo dopant diffusion simulation program has been developed which includes charged species, i.e. Fermi-level effects on drift-diffusion and reactions. In order to save computational time, an algorithm that determines variable time steps was improved to account for all the Fermi-level dependent quantities, such as different charge states of point-defects, pairs and complexes, and different diffusivities/reaction rates for them. Simulation of coupled arsenic and boron diffusion for a typical sub-100nm CMOS process has been demonstrated by using this MC program.

Keywords

Charged Species Boron Diffusion Diffusion Simulation Dopant Diffusion Variable Time Step 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Masami Hane
    • 1
  • Takeo Ikezawa
    • 1
  • George H. Gilmert
    • 2
  1. 1.Silicon Systems Research LaboratoriesNEC CorporationSagamihara, KanagawaJapan
  2. 2.Agere SystemsMurray HillUSA

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