Monte Carlo Impurity Diffusion Simulation Considering Charged Species

  • Masami Hane
  • Takeo Ikezawa
  • George H. Gilmert
Conference paper


A Monte Carlo dopant diffusion simulation program has been developed which includes charged species, i.e. Fermi-level effects on drift-diffusion and reactions. In order to save computational time, an algorithm that determines variable time steps was improved to account for all the Fermi-level dependent quantities, such as different charge states of point-defects, pairs and complexes, and different diffusivities/reaction rates for them. Simulation of coupled arsenic and boron diffusion for a typical sub-100nm CMOS process has been demonstrated by using this MC program.


Charged Species Boron Diffusion Diffusion Simulation Dopant Diffusion Variable Time Step 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Masami Hane
    • 1
  • Takeo Ikezawa
    • 1
  • George H. Gilmert
    • 2
  1. 1.Silicon Systems Research LaboratoriesNEC CorporationSagamihara, KanagawaJapan
  2. 2.Agere SystemsMurray HillUSA

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