An Impact Ionization Model Including Non-Maxwellian And Non-Parabolicity Effects
Accurate modeling of impact-ionization is a critical issue for submicron devices. It is well known that models based on the electric field or on the average carrier energy give a rather poor description of the problem. We show that by accounting for the average square energy an accurate analytical description of the distribution function can be given which can then be used to evaluate microscopic models in a macroscopic device simulator. The new model is accurate for both bulk and submicron devices and involves only local quantities.
KeywordsMonte Carlo Impact Ionization Monte Carlo Result Local Quantity High Energy Tail
Unable to display preview. Download preview PDF.
- K. Hasnat, C.-F. Yeap, S. Jallepalli, S. Hareland, W.-K. Shih, V. Agostinelli, A. Tasch, and C. Maziar, “Thermionic Emission Model of Electron Gate Current in Submicron NMOSFETs,” IEEE Trans.Electron Devices vol. ED-44, no. 1, pp. 129–138, 1997.Google Scholar
- E. Kane, “Band Structure of Indium Antimonide,” J.Phys.Chem.Solids vol. 1, pp. 249–261, 1957.Google Scholar
- M. Fischetti and S. Laux, “Monte Carlo Analysis of Electron Transport in Small Semiconductor Devices Including Band-Structure and Space-Charge Effects,” Physical Review B vol. 38, no. 14, pp. 97219745, 1988.Google Scholar
- L. Keldysh, “Concerning the Theory of Impact Ionization in Semiconductors,” Sov.Phys.JETP vol. 21, pp. 1135–1144, 1965.Google Scholar
- T. Grasser, H. Kosina, M. Gritsch, and S. Selberherr, “Using Six Moments of Boltzmann’s Transport Equation for Device Simulation,” 2001. to appear in J.Appl.Phys. Google Scholar