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On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets

  • A. Burenkov
  • Y. Mu
  • H. Ryssel
Conference paper

Abstract

The standard model for simulation of ion implantation into amorphous materials based on the LSS concept of ion penetration [1] remained a reliable work horse for the simulation of ion implantation for a long time, but recent accurate experimental measurements of the implantation profiles in non-crystalline materials (photoresist, amorphous carbon, pre-amorphized silicon) indicated systematic deviations of the measured profiles from the predictions of that standard model. The experimentally measured implantation profiles are usually broader than predictions of simulations based on the amorphous material model, and the relative profile broadening is especially significant for heavy ions at elevated implantation energies. Several physical effects may come in question to explain the broadening of the implantation profiles: experimental uncertainty during the profile analysis, radiation enhanced diffusion during ion implantation, deficiency of the physical model for ion-atomic interaction. The high accuracy of the measurements and the fact that the observed profile broadening is independent of the chemical nature of the target atoms and ions speaks in favour of the last assumption about the physical background of these deviations between the model and experiment.

Keywords

Impact Parameter Target Atom Projected Range Implantation Energy Implantation Profile 
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References

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • A. Burenkov
    • 1
  • Y. Mu
    • 2
  • H. Ryssel
    • 3
  1. 1.Fraunhofer Institute of Integrated Circuits Schottkystrasse 10ErlangenGermany
  2. 2.Physics DepartmentShandong UniversityJinanChina
  3. 3.Presently at the Institute of Physical and Theoretical ChemistryGoethe University Frankfurt/Main Marie Curie Strasse 11Frankfurt/MainGermany

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