A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism
A new temperature dependant model for the Ge-B pairing mechanism has been established and implemented in a process simulator. The combination of both lattice strain effects and GeB clustering has been successfully applied to various anneals. The match with experimental SIMS profiles is excellent.
KeywordsDiffuse Profile Furnace Anneal SiGe Layer Pairing Mechanism Thermal Budget
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