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A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism

  • D. Villanueva
  • P. Moens
  • K. Rajendran
  • W Schoenmaker
Conference paper

Abstract

A new temperature dependant model for the Ge-B pairing mechanism has been established and implemented in a process simulator. The combination of both lattice strain effects and GeB clustering has been successfully applied to various anneals. The match with experimental SIMS profiles is excellent.

Keywords

Diffuse Profile Furnace Anneal SiGe Layer Pairing Mechanism Thermal Budget 
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References

  1. [1]
    K. Rajendran et al., Simulation of B Diffusion in SiGe layers. SISPAD2000, pp. 206-209Google Scholar
  2. [2]
    R.F. Lever et al., Boron diffusion across silicon-silicon germanium boundaries. J. Appl. Phys., vol.83, pp.1988–1994, 1998.CrossRefGoogle Scholar
  3. [3]
    N. Cowern et al., Diffusion in strained (SiGe), Phys. Rev. Left., vol.72, pp. 2585, 1994.CrossRefGoogle Scholar
  4. [4]
    DIOS, process simulator, Ver 6.1, ISE AG, Zurich, Switzerland.Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • D. Villanueva
    • 1
  • P. Moens
    • 1
  • K. Rajendran
    • 2
  • W Schoenmaker
    • 2
  1. 1.Alcatel MicroelectronicsWesterring 15OudenaardeBelgium
  2. 2.IMEC, Kapeldreef 75Murray HillLeuvenBelgium

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