Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs

  • S. Kaya
  • A. R. Brown
  • A. Asenov
  • D. Magot
  • T. LintonI


We present a full-3D statistical analysis of line edge roughness (LER) in sub-0.1 μm MOSFETs. The modelling approach for line edges and the parameters used in the analysis take into account the statistical nature of the roughness. The results indicate that intrinsic fluctuations in MOSFETs due to LER become comparable in size to random dopant effects and can seriously inhibit scaling below 50 nm.


Correlation Length Threshold Voltage Gate Length Lithography Process Short Channel Effect 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • S. Kaya
    • 1
  • A. R. Brown
    • 1
  • A. Asenov
    • 2
  • D. Magot
    • 2
  • T. LintonI
    • 3
  1. 1.Device Modelling GroupUniversity of GlasgowScotlandUK
  2. 2.SEECSOhio UniversityAthensUSA
  3. 3.TCAD DivisionIntel Corp.Santa ClaraUSA

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