The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization
We investigate the role that point defects and interstitial-vacancy pairs have on the Si amorphization process using molecular dynamics techniques. We show that accumulation of interstitial-vacancy pairs in concentrations of 25% and above lead to homogeneous amorphization. We identify very stable defect structures, consisting of the combination of the pair and Si self-interstitials, which form when there is an excess of interstitials or by incomplete interstitial-vacancy recombination in a highly damaged lattice. These defects could survive long enough at room temperature to act as embryos for the formation of extended amorphous zones and/or point defect clusters.
KeywordsConcentration ofIV Intrinsic Point Defect Amorphous Zone Molecular Dynamic Technique Amorphization Process
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- Tang, M., Colombo, L., Zhu, J., Diaz de la Rubia, T. (1997): Intrinsic point defects in crystalline Si: Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes. Phys. Rev. B 55: 14279–14289Google Scholar
- Jara¨ªz, M., Pelaz, L., Rubio, E., Barbolla, J., Gilmer, G.H., Eaglesham, D.J., Gossmann, H.J., Poate, J.M. (1998): Atomistic modeling of point and extended defects in crystalline materials. MRS Symp. Proc. 532, MRS Spring Meeting, San Francisco, pp. 43–53Google Scholar