Abstract
The understanding of the effect of each physical mechanism driving dopant and point defect diffusion due to Ge leads to a unified formulation of diffusion for the usual dopants in SiGe material. The model calibration is deduced from a critical synthesis of the theoretical and experimental published studies.
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© 2001 Springer-Verlag Wien
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Pakfar, A., Poncet, A., Schwartzmann, T., Jaouen, H. (2001). A Unified Model of Dopant Diffusion in SiGe.. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_14
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_14
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