A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex by Carbon Insertion
We present a simple modeling of boron diffusion in Sii_X_yGe„Cy by manipulating the strain and the intrinsic carrier concentration. We show that the diffusion of boron is strongly suppressed by a moderate concentration of substitutional C in Sii_XGex. This suppression is due to an under saturation of Si selfinterstitials in the C-rich region. The results obtained from the proposed model are in good agreement with the measured values.
KeywordsSiGe Layer Heterojunction Bipolar Transistor Boron Diffusivity Substitutional Carbon Intrinsic Carrier Concentration
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