A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex by Carbon Insertion

  • K. Rajendran
  • W. Schoenmaker
Conference paper


We present a simple modeling of boron diffusion in Sii_X_yGe„Cy by manipulating the strain and the intrinsic carrier concentration. We show that the diffusion of boron is strongly suppressed by a moderate concentration of substitutional C in Sii_XGex. This suppression is due to an under saturation of Si selfinterstitials in the C-rich region. The results obtained from the proposed model are in good agreement with the measured values.


SiGe Layer Heterojunction Bipolar Transistor Boron Diffusivity Substitutional Carbon Intrinsic Carrier Concentration 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • K. Rajendran
    • 1
  • W. Schoenmaker
    • 1
  1. 1.STDI/TCAD DivisionIMECLeuvenBelgium

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