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Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon

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Simulation of Semiconductor Processes and Devices 2001

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Abstract

We present a “unified” model for the simulation of boron transient enhanced diffusion in both crystalline and preamorphised structures. The model describes the thermal evolution of a supersaturation of Si interstitial atoms in dynamical equilibrium with all types of extrinsic defects. We show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantion energies.

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Author information

Authors and Affiliations

  1. LAAS/CNRS, 31077, Toulouse, 7 ay. du Col. Roche, France

    F. Cristiano, B. Colombeau & C. Bonafos

  2. CEMES/CNRS, 29 rue J. Marvig, 31055, Toulouse, France

    J. Aussoleil, G. Ben Assayag & A. Claverie

Authors
  1. F. Cristiano
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  2. B. Colombeau
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  3. C. Bonafos
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  4. J. Aussoleil
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  5. G. Ben Assayag
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  6. A. Claverie
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Editor information

Editors and Affiliations

  1. “Demokritos” National Center for Scientific Research, Institute of Microelectronics, Athens, Greece

    Dimitris Tsoukalas  & Christos Tsamis  & 

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© 2001 Springer-Verlag Wien

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Cristiano, F., Colombeau, B., Bonafos, C., Aussoleil, J., Assayag, G.B., Claverie, A. (2001). Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_6

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  • DOI: https://doi.org/10.1007/978-3-7091-6244-6_6

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7278-0

  • Online ISBN: 978-3-7091-6244-6

  • eBook Packages: Springer Book Archive

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