Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon
We present a “unified” model for the simulation of boron transient enhanced diffusion in both crystalline and preamorphised structures. The model describes the thermal evolution of a supersaturation of Si interstitial atoms in dynamical equilibrium with all types of extrinsic defects. We show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantion energies.
KeywordsDislocation Loop Defect Region Atomistic Simulation Acceleration Coefficient Boron Diffusivity
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