Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential

  • J. R. Watling
  • A. R. Brown
  • A. Asenov
  • D. K. Ferry


As MOSFET devices are aggressively scaled into the deep submicron regime quantum mechanical effects become increasingly important. We compare the recently proposed effective potential formalism with the density gradient approach for first order quantum simulations of sub 0.1μm MOSFETs within a modified drift diffusion framework.


Threshold Voltage Quantum Correction Gate Length Bohmian Mechanic Substrate Doping 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • J. R. Watling
    • 1
  • A. R. Brown
    • 1
  • A. Asenov
    • 2
  • D. K. Ferry
    • 2
  1. 1.1University of GlasgowGlasgowScotland
  2. 2.2Arizona State UniversityTempeUSA

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