Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi2
In dual workfunction gate technologies it can be observed, that p+ poly gates of pMOSFETs tend to lose boron doping. This work presents a model for the transport of Si and B in the TiSi2/polysilicon bilayer system that can explain the saturation of the B dose loss.
KeywordsTitanium Diborides Bilayer System Dopant Diffusion Point Defect Model Minute Anneal
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