Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi2

  • F. G. Lau
  • W. Molzer
Conference paper


In dual workfunction gate technologies it can be observed, that p+ poly gates of pMOSFETs tend to lose boron doping. This work presents a model for the transport of Si and B in the TiSi2/polysilicon bilayer system that can explain the saturation of the B dose loss.


Titanium Diborides Bilayer System Dopant Diffusion Point Defect Model Minute Anneal 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • F. G. Lau
    • 1
  • W. Molzer
    • 1
  1. 1.Infineon Technologies AGCFE TD SIMMunichGermay

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