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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

  • Book
  • © 1998

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Editors:
  1. Eric Garfunkel

    1. Rutgers University, Piscataway, USA

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  2. Evgeni Gusev

    1. Rutgers University, Piscataway, USA

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  3. Alexander Vul’

    1. A.F. loffe Physico- Technical Institute of the Russian Academy of Science, St. Petersburg, Russia

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Part of the book series: NATO Science Partnership Subseries: 3 (ASHT, volume 47)

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Table of contents (37 chapters)

  1. Section 4: Initial oxidation and surface science issues

    1. Scanning Tunneling Microscopy on Oxide and Oxynitride Formation, Growth and Etching of Si Surfaces

      • H. Neddermeyer, T. Doege, E. Harazim, R. Kliese, A. Kraus, R. Kulla et al.
      Pages 289-307

    2. The Interaction of Oxygen with Si(100) in the Vicinity of the Oxide Nucleation Threshold

      • V. D. Borman, V. I. Troyan, Yu.Yu. Lebedinski
      Pages 309-314

  2. Section 5: Electrical properties and microscopic models of defects

    1. Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides

      • M. Hirose, W. Mizubayashi, K. Morino, M. Fukuda, S. Miyazaki
      Pages 315-324

    2. Electrical Defects at the SiO2/Si Interface Studied by EPR

      • James H. Stathis
      Pages 325-333

    3. Towards an Atomic Scale Understanding of Defects and Traps in Oxide/Nitride/Oxide and Oxynitride Systems

      • V. A. Gritsenko
      Pages 335-342

    4. A New Model of Photoelectric Phenomena in MOS Structures

      • H. M. Przewlocki
      Pages 343-357

    5. Point Defect Generation During Si Oxidation and Oxynitridation

      • C. Tsamis, D. Tsoukalas
      Pages 359-373

    6. Optically Induced Switching in Bistable Structures: Heavily Doped n+- Polysilicon - Tunnel Oxide Layer - n - Silicon

      • V. Yu. Osipov
      Pages 375-382

    7. Heterojunction Al/SiO2/n-Si Device as an Auger Transistor

      • E. V. Ostroumova, A. A. Rogachev
      Pages 383-390

    8. Radiation Induced Behavior in MOS Devices

      • V. V. Emelianov, G. I. Zebrev, O. V. Meshurov, A. V. Sogoyan, R. G. Useinov
      Pages 391-396

  3. Section 6: HydrogenlDeuterium issues

    1. Hydrogenous Species and Charge Defects in the Si-SiO2 System

      • Edward H. Poindexter, Christopher F. Young, Gary J. Gerardi
      Pages 397-409

    2. The Role of Hydrogen in the Formation, Reactivity and Stability of Silicon (Oxy)Nitride Films

      • F. H. P. M. Habraken, E. H. C. Ullersma, W. M. Arnoldbik, A. E. T. Kuiper
      Pages 411-424

    3. Hydrogen-Induced Donor States in the Mos System:

      • J. M. M. De Nijs, K. G. Druijf, V. V. Afanas’ev
      Pages 425-430

  5. Back Matter

    Pages 503-507
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Keywords

About this book

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Editors and Affiliations

  • Rutgers University, Piscataway, USA

    Eric Garfunkel, Evgeni Gusev

  • A.F. loffe Physico- Technical Institute of the Russian Academy of Science, St. Petersburg, Russia

    Alexander Vul’

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