Abstract
The interest in metal-insulator-semiconductor (MIS) diode structures with the insulator layer thinner than 50 Å, when the conductivity of the layer can no longer be ignored, has arisen over 25 years ago and has been initially related to the mechanism of the current flow, particularly by tunneling. In recent years the interest in such structures with a partly conducting insulator, i.e., in metal-tunnel insulator-semiconductor (MTIS) structures has grown due to several factors. These factors include the following: the need to reduce the thickness of the gate insulator in silicon field-effect transistors so as to reduce the length of the channel to submicron dimensions in modern integrated circuits, the development of MIS transistors with a tunnel emitter, the feasibility of constructing highly efficient solar cells and photodetectors from MIS diodes, and the development of MIS switches and oscillators operating on the basis of the tunnel surface-barrier instability effect.
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References
Lai, S.K., Dressendorfer, P.V., Ma, T.P. and Barker, R.C. (1981) Optically induced bistable states in metal/ tunnel oxide/ semiconductor (MTOS) junctions, Appl. Phys. Lett. 38 41–44.
Fossum, E.R., and Barker, R.C. (1984) Measurement of hole leakage and impact ionization currents in bistable metal-tunnel oxide-semiconductor junctionsIEEE Trans. Electron. Devices ED-31 1168–1174.
Vul’, A.Ya., Makarova, T.L., Osipov, V.Yu., Zinchik, Yu.S., and Boitsov, S.K. (1992) Kinetics of silicon oxidation and structure of oxide films of thickness less than 50 Å, Soy. Phys. Semicond. 26 62–67.
Boitsov, S.K, Vul’, A.Ya., Osipov, V.Yu., Dideikin, A.T., Zinchik, Yu.S., Makarova, T.L. (1991) Passage of current through tunnel-transparent insulator in STIS structures, Soy. Phys. Solid State 33, 1003–1007.
Boitsov, S.K., Makarova, T.L., and Osipov, V.Yu. (1992) Problem of tunneling across an intermediate (1950 Å) oxide layer in semiconductor-tunnel transparent insulator-semiconductor structure, Soy. Phys. Solid State 34 777–781.
Ostroumova, E.V., and Rogachev, A.A. (1994) A simple model for the Auger transistor, Semiconductors 26 793–797.
Vul’, A.Ya., Dideikin, A.T., Boitsov, S.K., Zinchik, Yu.S., and Sachenko, A.V. (1992) Photodetectors based on metal-tunnel insulator-semiconductor structures, Soy. Phys. Semicond. 26 166–170.
Vul’, A.Ya., Dideikin, A.T., Osipov, V.Yu., Boitsov, S.K., Zinchik, Yu.S., and Makarova, T.L. (1992) Current-voltage and capacitance-voltage characteristics of silicon semiconductor-insulator-semiconductor structures with the insulator layer less than 50 Å thick, Soy. Phys. Semicond. 26 81–83.
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© 1998 Springer Science+Business Media Dordrecht
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Osipov, V.Y. (1998). Optically Induced Switching in Bistable Structures: Heavily Doped n+- Polysilicon - Tunnel Oxide Layer - n - Silicon. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_27
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DOI: https://doi.org/10.1007/978-94-011-5008-8_27
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