Abstract
Electron paramagnetic resonance (EPR) is one of the most powerful techniques for studying defects in electronic materials. It has been applied to the Si/SiO2 system with considerable success over the past few decades. This paper will review recent work using this technique in conjunction with electrical characterization methods to study the physics and chemistry of electrically active defects in metal-oxide-semiconductor field effect transistors (MOSFETs). This work has revealed the crucial role played by atomic hydrogen (H0) in the chemistry of defects in Si02. Experiments in which Si/Si02 structures are exposed to H0 help to explain various phenomena resulting from electrical stress or radiation exposure in MOS structures. However, this work has also opened new questions about the nature of the dominant electrically active defects at or near the Si/Si02 interface.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
E.H. Poindexter and P.J. Caplan, Prog. Surf. Sci. 14 201 (1983).
D.L Griscom, in D.R. Uhlmann and N.J. Kreidl (eds.), Glass Science and Technology, vol 4B (Academic Press, New York, 1990) p. 151.
B. Henderson, M. Pepper, and R.L. Vranch, Semicond. Sci. Technol 4 1045 (1989).
J.H. Stathis and D.J. DiMaria, Appl. Phys. Lett. 61 2887 (1992).
J.H. Stathis, Appl. Phys. Lett. 68 1669 (1996).
E. Cartier and J.H. Stathis, Microelectron. Eng. 28 3 (1995).
A.G. Revesz, J. Electrochem. Soc. 126 122 (1979).
Unless all the hydrogen could be replace by deuterium; see J.W. Lyding, K. Hess, and I.C. Kizilyalli, Appl. Phys. Lett. 68 2526 (1996).
D.J. DiMaria and J.W. Stasiak, J. Appl. Phys. 65 2342 (1989), and references therein.
D.L. Griscom, J. Electron. Mater. 21 763 (1992).
E. Cartier, J.H. Stathis, and D.A. Buchanan, J. Appl. Phys. 63 1510 (1993).
J. H. Stathis and E. Cartier, Phys. Rev. Lett. 72 2745 (1994).
A.H. Edwards, in C.R. Helms and B.E. Deal (eds.), The Physics and Chemistry of Si0 2 and the Si-SiO. Interface (Plenum, New York, 1988), p. 271.
R.E. Stahlbush, E. Cartier, and D.A. Buchanan, Microelectron. Eng. 28 15 (1995).
E.H. Poindexter, in Z.C. Feng (ed.), Semiconductor Interfaces, Microstructures, and Devices: Properties and Applications (Insititute of Physics Publishing, Bristol, 1993) p. 229.
E. Cartier and J.H. Stathis, Appl. Phys. Lett. 69 103 (1996).
K.G. Druijf, J.M.M. deNijs, E. v.d. Drift, V.V. Afanas’ev, E.H.A. Granneman, and P. Balk, J. Non-Crystalline Sol. 187 206 (1995).
D.J. DiMaria and E. Cartier, J. Appl. Phys. 78 3883 (1995).
B. Ricco, M. Ya. Azbel, and M.H. Brodsky, Phys. Rev. Lett. 51 1795 (1983).
J.H. Stathis, Microelectron. Eng. 22 191 (1993).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1998 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Stathis, J.H. (1998). Electrical Defects at the SiO2/Si Interface Studied by EPR. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_23
Download citation
DOI: https://doi.org/10.1007/978-94-011-5008-8_23
Publisher Name: Springer, Dordrecht
Print ISBN: 978-0-7923-5008-8
Online ISBN: 978-94-011-5008-8
eBook Packages: Springer Book Archive