Abstract
The kinetics of silicon oxide formation on Si (100) at submonolayer coverages and surface roughening near the oxide nucleation threshold (NT) at temperatures T=915940 K and oxygen pressure P=4x10-7 Ton are investigated by X-ray photoelectron spectroscopy and atomic force microscopy. Microscopic mechanisms of vacancies accumulation and roughening phase transition are proposed. We also discuss the reasons for the change of the oxidation mode.
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© 1998 Springer Science+Business Media Dordrecht
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Borman, V.D., Troyan, V.I., Lebedinski, Y. (1998). The Interaction of Oxygen with Si(100) in the Vicinity of the Oxide Nucleation Threshold. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_21
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DOI: https://doi.org/10.1007/978-94-011-5008-8_21
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