Abstract
We propose that atomic hydrogen, trapped at regular network oxygen atoms, produces a hole trap, a slow state and an interface state. The overcoordinated oxygen configuration resulting from this interaction is associated with an electronic donor state.
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Stahlbush, R.E., (1996) Slow and fast state formation caused by hydrogen, in: Massoud, H.Z., Pointdexter, E.H. and Helms, C.R. (eds.), The Physics and chemistry of SiO2 and the Si/SiO2 interface, Vol 96–1, The Electrochemical Soc., Pennington, NY, 525–37.
Cartier, E., Stathis, J.H. and Buchanan, D.A. (1993) Passivation and depassivation of Si dangling bonds at the Si/SiO2 interface by atomic hydrogen, Appl. Phys. Leu. 63, 1510–12.
Stahlbush, R.E., Cartier, and E., Buchanan, D.A., (1995) Anomalous Positive Charge formation by atomic hydrogen exposuree, Microelectron. Eng. 28, 15–18.
McLean, F.B. (1980) A framework for understanding radiation-induced interface states in MOS structures, IEEE Trans. Nucl. Sci., NS-27, 1651–63.
Druijf, K.G., de Nijs, J.M.M., Drift, E. van der, Granneman, E.H.A. and Balk, P., (1994) The nature of defects in the Si-SiO2 System generated by VUV Irradiation, Appl. Phys. Leu., 65, 347–49.
Nijs, J.M.M. de, Druijf, K.G., Afanas’ev, V.V., Drift, E. van der and Balk, P. (1994) Hydrogen-induced donor-type Si/SiO2 interface states, Appl. Phys. Leu. 65, 2428–30.
Druijf, K.G., Nijs, J.M.M. de, Afanas’ev, V.V., Drift, E. van der and Balk, P., (1995) On the microscopic nature of donor-type Si/SiO2 interface states. J. Non-Crystal. Solids, 187, 206–209.
Edwards, A.H., (1991) Interaction of H and H2 with the silicon dangling orbital at the (Ill) Si/SiO2 interface. Phys. Rev. B, 44, 1832–38.
Druijf, K.G., de Nijs, J.M.M., Drift, E. van der, Granneman, E.H.A. and Balk, P., (1995) Recovery of VUV-irradiated MOS systems, J. Appl. Phys., 77, 3657–67.
Saks, N.S. and Rendell, R.W. (1992) The time-dependence of post-irradiation interface state build-up in deuterium annealed oxides, IEEE Trans. Nucl. Sci., NS-39, 2220–29.
Edwards, A.H., and Germann, G., (1988) Interaction of hydrogen molecules with intrinsic defects in a- SiO2, Nucl. Instr. Meth. Phys. Res. B32, 238–47.
Afanas’ev, V.V., Nijs, J.M.M. de, and Balk, P. SiO2 hole traps with small cross section (1995) Appl. Phys. Lett. 66, 1738–40.
Stiver, A.R. and Sah, C.T. (1981) A study of oxide traps and interface states of the Si/SiO2 interface, J. Appl. Phys. 51, 6292–04
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© 1998 Springer Science+Business Media Dordrecht
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De Nijs, J.M.M., Druijf, K.G., Afanas’ev, V.V. (1998). Hydrogen-Induced Donor States in the Mos System:. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_32
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DOI: https://doi.org/10.1007/978-94-011-5008-8_32
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