Abstract
The initial stages of SiC-Si02 interface formation by low temperature (300 ºC) remote plasma assisted oxidation (RPAO) have been studied by on-line Auger electron spectroscopy (AES) for flat and vicinal 6H SiC(0001) wafers with Si(0001) and C faces (0001). The paper focuses on i) interfacial bonding and ii) oxidation rates for thickness to about 2 nm. Plasma-assisted oxidation of 6H SiC is compared with i) thermal oxidation of SiC and ii) plasma-assisted oxidation of flat and vicinal Si(111).
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Lucovsky, G., Niimi, H. (1998). The Initial Phases of Sic-SiO2 Interface Formation by Low-Temperature (300 ºC) Remote Plasma-Assisted Oxidation of Si and C Faces on Flat and Vicinal 6H SiC. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_34
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DOI: https://doi.org/10.1007/978-94-011-5008-8_34
Publisher Name: Springer, Dordrecht
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