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Towards an Atomic Scale Understanding of Defects and Traps in Oxide/Nitride/Oxide and Oxynitride Systems

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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

Part of the book series: NATO Science Series ((ASHT,volume 47))

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Abstract

Amorphous dielectrics are key components of silicon devices. Silicon oxide, which has been used as the gate dielectric in MOS devices, is facing a number of challenges for deep sub-micron devices due to its low reliability because of electron and hole capturing, breakdown and boron penetration from poly-silicon. Silicon oxynitride (SiOXNy) will probably be used as the gate dielectric in the near future because of its boron blocking capabilities and higher reliability. Traps in SiOXNy determine the leakage current, breakdown and reliability. The nature of the traps still remains unclear.

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References

  1. Suzuki, E., Hayashi, Y. (1986). On the Oxide-Nitride Interface Traps by Thermal Oxidation of Thin Nitride in Metal-Oxide-Nitride-Oxide-Semiconductor Structures, IEEE Trans. Electron Devices, ED-33, 214–217.

    Article  Google Scholar 

  2. Weinberg, Z.A., Stein, H.J., Nguen, T.N., and Sun J.Y. (1990) Ultrathin Oxide- Nitride-Oxide Films, Appl. Phys. Lett. 57, 1248–1251.

    Article  CAS  Google Scholar 

  3. Ozawa, Y., Yamabe, K., Iwai, H., Sasaki, M., Toyota, M. (1995) An Improvement of Hot-Carrier Reliability in the Stacked Nitride-Oxide Gate n-and p-MISFET’s, IEEE Transactions on Electron Devices, 42, 704–712.

    Article  Google Scholar 

  4. Britov, I.A., Gritsenko, V.A., and Romaschenko, Yu.N. (1985) Short-Range Order and Electronic Structure of Amorphous SiN%Oy, Letters to Journal of experimental and Theoretical Physics, 62, 321–327.

    Google Scholar 

  5. Gritsenko, V.A. (1993) Structure and Electronic Properties of Amorphous Dielectrics in Silicon MIS Structures, Ed. Science, Novosibirsk, Russia.

    Google Scholar 

  6. Gritsenko, V.A., Kostikov, Yu.P., and Romanov, N.A. (1981) SiO,, as a Model Medium with Large-Scale Potential Fluctuation, Letters to Journal of Experimental and Theoretical Physics, 34, 3–6.

    Google Scholar 

  7. Gritsenko, V.A., Dikovskaja, N.D., and Mogilnikov, K.P. (1978) Band Diagram and Conductivity of Silicon Oxinitride Films, Thin Solid Films, 51, 353–357.

    Article  CAS  Google Scholar 

  8. Gritsenko, V.A., Meerson, E.E. (1988) Injection of Electrons and Holes from Metal in MNOS Structures, Microelectronics (Sov), 17, 249–255.

    CAS  Google Scholar 

  9. Gritsenko, V.A. (1988) Electronic Structure and Optical Properties of Silicon Nitride, In “Silicon Nitride in Electronics”, Elsevier, New York.

    Google Scholar 

  10. DiMaria, D.J., Arnett, P.C. (1975) Hole Injection into Silicon Nitride: Interface Barrier Energy by Internal Photoemission, Appl. Phys. Lett, 26, 711–714.

    Article  CAS  Google Scholar 

  11. Ginovker, A.S., Gritsenko, V.A., Sinitsa, S.P. (1974) Two Band Conduction of Amorphous Silicon Nitride, Phys. Stat. Sol. B26, 489–495.

    Article  Google Scholar 

  12. Gritsenko, V.A., Meerson, E.E., (1988) Monopolar and Bipolar Injection in MNOS Structures, Microelectronics (Sov), 17, 532–535.

    Google Scholar 

  13. Gritsenko, V.A., Morokov, Yu.N., Novikov, Yu.N., Petrenko, I.P. Svitasheva, S.N. (1997) Enriching of the Si3N4/ Thermal Oxide Interface by Excess Silicon in ONO structures, Microelectronic Engineering, 36, 123–124.

    Article  CAS  Google Scholar 

  14. Bolotin, V.P., Britov, I.A, Gritsenko, V.A., Olshanezkii, B.Z., Popov, V.P., Romashenko, Yu. N., Serjapin, V.G., Tiis, S.A. (1990) Composition and Structure of Enriched by Silicon Silicon Nitride, Soy. Phys. Dokl., 310, 114–117.

    CAS  Google Scholar 

  15. Gritsenko, V.A., Pundur, P. (1986) Muliphonon Capturing and Radiative Transitions in a-Si3N4, Soy. Physics Solid State, 28, 1829–1830.

    Google Scholar 

  16. Gritsenko, V.A., Meerson, E.E., Travkov, I.V., Goltvjanskii, Yu.V. (1987) Nonstationary Electrons and Holes Transport by Depolarization of MNOS Structures: Experiment and Numerical Simulation, Microelectronics (Sov), 16, 42–50.

    CAS  Google Scholar 

  17. Gritsenko, V.A., Kostikov, Yu.P., Khramova, L.V. (1992) Electronic Structure of Si-H and N-H Bond in SiN.:H, Soy. Phys. Solid State, 34, 1300–1303.

    Google Scholar 

  18. Gritsenko, V.A., Milov, A.D. (1996) Wigner Crystallization of Electrons and Holes in Amorphous Silicon Nitride, Antiferromagnetic Ordering of Localized Electrons and Holes as a Result of Resonance Exchange Interaction, Letters to Journal of Experimental and Theoretical Physics (Rus), 64, 531–536.

    Article  Google Scholar 

  19. Kamigaki,Y, Minami, S., and Kato, H. (1990) A New Model of Electron and Hole Traps in Amorphous Silicon Nitride, J. Appl. Phys., 68, 2211–2220.

    Article  CAS  Google Scholar 

  20. Gritsenko, V. A., Morokov, Yu.N.,. Novikov, Yu.N, Wong, H, Cheng, Y. C. (1997) Electronic Structure of Si-Si Bond in Si3N4 and Si02: Experiment and Simulation by MINDO/3, Pros. 1996’ Material Research Conference, Boston, USA

    Google Scholar 

  21. Lu, Z.H., Tay, S.P., Cao, R., Pianetta, P. (1995) The Effect of Thermal N2O Nitridation on the Oxide/Si(100) Interface Structure. Appl. Phys. Lett, 67, 2836–2838.

    Article  CAS  Google Scholar 

  22. Lu, H.C., Gusev, E.P., Gustafsson, T., Garfunkel, E., Green, M.L., Brasen, D., and Feldman, L.C. (1996) High Resolution Ion Scattering Study of Silicon Oxyhitridation, Appl. Phys. Lett. 69, 2713–2715.

    Article  Google Scholar 

  23. Malik, A., Vasi, J., and Chandorkar, A.N. (1993) The Nature of Hole Traps in Reoxidized Nitrided Oxide Gate Dielectrics. J. Appl. Phys. 74, 2665–2268.

    Article  Google Scholar 

  24. Yount, J.T. and Lenahan, P.M. Dunn, G.J. (1992) Electron Spin Resonance Study of Radiation-Induced Point Defects in Irradiated and Reoxidized Nitrided Oxides, IEEE Trans. Nuc1. Sci. 39, 2211–2219.

    Article  CAS  Google Scholar 

  25. Himpsel, J., McFeely, F.R., Tabel-Ibragimi, A., Yarmoff, J.A., Hollinger, G. (1988) Microscopic Structure of the SiO2/Si Interface, Phys Rev. B 38, 6084–6096.

    Article  CAS  Google Scholar 

  26. Bhat, M., Yoon, G.V., Kim, J., Kwong, D.L., Arendt, A. White, J.M. (1994) Effect of NH3 Nitridation on Oxide Grown in pure N20, Appl, Phys. Lett, 64, 2116–2118.

    Article  CAS  Google Scholar 

  27. Chramova, L.V., Chusova, T.P., Gritsenko, V.A. Feofanov, G.N., Smirnova, T.P. (1987) Chemical Compositional Changing and Absorbtion Edge Red Shift in Annealed Silicon Nitride, Nonorganic Materials (Soy), 23, 73–76

    Google Scholar 

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia

    V. A. Gritsenko

  2. Electronic Engineering Dept, The Chinese University of Hong Kong, China

    V. A. Gritsenko

Authors
  1. V. A. Gritsenko
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Editors and Affiliations

  1. Rutgers University, Piscataway, New Jersey, USA

    Eric Garfunkel  & Evgeni Gusev  & 

  2. A.F. loffe Physico- Technical Institute of the Russian Academy of Science, St. Petersburg, Russia

    Alexander Vul’

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© 1998 Springer Science+Business Media Dordrecht

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Gritsenko, V.A. (1998). Towards an Atomic Scale Understanding of Defects and Traps in Oxide/Nitride/Oxide and Oxynitride Systems. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_24

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  • DOI: https://doi.org/10.1007/978-94-011-5008-8_24

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-5008-8

  • Online ISBN: 978-94-011-5008-8

  • eBook Packages: Springer Book Archive

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