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Part of the book series: NATO Science Series ((ASHT,volume 47))

Abstract

Hydrogen in its several speciations plays major roles in the Si-Si02 system. Some roles are beneficial, some are harmful, and some are unclear in their effects. There has been, nonetheless, little systematic research on H and its compounds per se in the Si-Si02 system. Much knowledge has been accumulated; but it is almost all focused on explaining one or another specific device phenomenon, rather than on illuminating of the behavior of hydrogen in itself. A number of these are listed below:

  • Negative-bias-temperature instability (NBTI)

  • Radiation/hot-electron generated defects and charges

  • Passivation/depassivation of interface trapped charge

  • Deal oxidation triangle

  • Oxidation-induced “fixed” oxide charge

  • Atomic-H paradox

  • H vs D effect in generation of charge defects

  • Diffusion, solubility of H2O

  • Electron trapping in SiO2

  • Anomalous positive charge

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© 1998 Springer Science+Business Media Dordrecht

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Poindexter, E.H., Young, C.F., Gerardi, G.J. (1998). Hydrogenous Species and Charge Defects in the Si-SiO2 System. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_30

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  • DOI: https://doi.org/10.1007/978-94-011-5008-8_30

  • Publisher Name: Springer, Dordrecht

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