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Table of contents (37 chapters)
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Introduction
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Section 1. Recent advances in experimental studies of SiO2films on Si
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Section 2. Theory of the SiO2/Si and SiOxNy/Si systems
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Section 3: Growth mechanism, processing, and analysis of (oxy)nitridation
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Section 4: Initial oxidation and surface science issues
Keywords
About this book
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Editors and Affiliations
Bibliographic Information
Book Title: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Editors: Eric Garfunkel, Evgeni Gusev, Alexander Vul’
Series Title: NATO Science Partnership Subseries: 3
DOI: https://doi.org/10.1007/978-94-011-5008-8
Publisher: Springer Dordrecht
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eBook Packages: Springer Book Archive
Copyright Information: Springer Science+Business Media Dordrecht 1998
Hardcover ISBN: 978-0-7923-5007-1Published: 31 March 1998
Softcover ISBN: 978-0-7923-5008-8Published: 31 March 1998
eBook ISBN: 978-94-011-5008-8Published: 06 December 2012
Series ISSN: 1388-6576
Edition Number: 1
Number of Pages: XI, 507
Number of Illustrations: 114 b/w illustrations
Topics: Optical and Electronic Materials, Surfaces and Interfaces, Thin Films
Industry Sectors: Aerospace, Chemical Manufacturing, Electronics, Energy, Utilities & Environment, IT & Software, Materials & Steel, Telecommunications