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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices pp 257–276Cite as

Low Temperature Ultrathin Dielectrics on Silicon and Silicon Carbide Surfaces: From the Atomic Scale to Interface Formation

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Part of the book series: NATO Science Series ((ASHT,volume 47))

Abstract

Oxides, nitrides and oxynitrides are among the most important passivation layers of semiconductor surfaces and are generally grown through molecular (02, H20, N2, NH3, N20 or NO) interaction with the surface. The reaction could be promoted by surface electronic modification using e.g. a catalyst, by elevated temperatures, by photoreaction using unmonochromatized synchrotron radiation, or by surface structure modification. Some of the latest developments in low temperature ultrathin dielectric growth on representative silicon and silicon carbide surfaces are presented. Such important issues as interface formation, atomic scale initial and self-propagating oxidation, influence of surface structure and composition, role of defects, oxide/oxynitride stoichiometry, and reaction micromechanisms are addressed in this review article. The presented investigations are based on photoelectron spectroscopies using second and third generation synchrotron radiation light sources and atom-resolved scanning tunneling microscopy experiments.

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Author information

Authors and Affiliations

  1. Commissariat à l’Énergie Atomique, DSM - DRECAM - SRSIM, Bât. 462, Centre d’Etudes de Saclay, 91191, Yvette, Cedex, France

    Patrick G. Soukiassian

  2. Département de Physique, Université de Paris-Sud, 91405, Orsay, Cedex, France

    Patrick G. Soukiassian

  3. Department of Physics, Northern Illinois University, DeKalb, IL, 60115, USA

    Patrick G. Soukiassian

Authors
  1. Patrick G. Soukiassian
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Editor information

Editors and Affiliations

  1. Rutgers University, Piscataway, New Jersey, USA

    Eric Garfunkel  & Evgeni Gusev  & 

  2. A.F. loffe Physico- Technical Institute of the Russian Academy of Science, St. Petersburg, Russia

    Alexander Vul’

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© 1998 Springer Science+Business Media Dordrecht

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Soukiassian, P.G. (1998). Low Temperature Ultrathin Dielectrics on Silicon and Silicon Carbide Surfaces: From the Atomic Scale to Interface Formation. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_18

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  • DOI: https://doi.org/10.1007/978-94-011-5008-8_18

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-5008-8

  • Online ISBN: 978-94-011-5008-8

  • eBook Packages: Springer Book Archive

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