Abstract
Incorporation of nitrogen atoms into gate dielectrics: i) reduces defect generation at the Si-SiO2 interface when incorporated at monolayer levels; ii) permits use of physically-thicker oxide-equivalent gate thicknesses when incorporated in the body of the dielectric; and iii) reduces boron penetration from p+ poly-silicon gate electrodes through the dielectric films when incorporated at the poly-Si-dielectric interface, or in the body of the dielectric. This paper demonstrates that nitrogen atoms can be selectively incorporated into these different parts of device-quality gate dielectrics by low-thermal budget remote plasma assisted processing followed by rapid thermal annealing.
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Lucovsky, G. (1998). Spatially-Selective Incorporation of Bonded-Nitrogen into Ultra-Thin Gate Dielectrics by Low-Temperature Plasma-Assisted Processing. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_11
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DOI: https://doi.org/10.1007/978-94-011-5008-8_11
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