Abstract
EEPROMs (electrical erasable programmable read only memory) actually are used for various applications in microcontrollers or chip card products. For cell reliability improvement, reduction of internal programming voltages (<12V) is favorable which would also simplify the peripheral circuit design related to internal voltage generation. New card technologies require more memory capacity and therefore a higher integration density with thinner dielectric layers. In floating gate tunnel oxide (FLOTOX) type EEPROMs this reduction of the tunnel oxide (TOX) also leads to a desired lower programming voltage. But leakage current through the tunnel oxide limits the thickness reduction.
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© 1998 Springer Science+Business Media Dordrecht
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Mattheus, A., Gschwandtner, A., Innertsberger, G., Grassl, A., Talg, A. (1998). Endurance of EEPROM-Cells Using Ultrathin NO and NH3 Nitrided Tunnel Oxides. In: Garfunkel, E., Gusev, E., Vul’, A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series, vol 47. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5008-8_15
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DOI: https://doi.org/10.1007/978-94-011-5008-8_15
Publisher Name: Springer, Dordrecht
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