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Molecular Beam Epitaxy and Heterostructures

  • Book
  • © 1985

Overview

Editors:
  1. Leroy L. Chang

    1. IBM T.J. Watson Research Center, Yorktown Heights, USA

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    You can also search for this editor in PubMed   Google Scholar

  2. Klaus Ploog

    1. Max-Planck-lnstitute, Stuttgart 80, Germany

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    You can also search for this editor in PubMed   Google Scholar

Part of the book series: NATO Science Series E: (NSSE, volume 87)

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Table of contents (18 chapters)

  1. Front Matter

    Pages i-viii
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  5. Theory of Heterostructures

    1. Theory of Heterojunctions: A Critical Review

      • Herbert Kroemer
      Pages 331-379

    2. Envelope Function Approach to the Superlattices Band Structure

      • G. Bastard
      Pages 381-423

  6. Electronic Properties of Heterostructures

    1. Light Scattering In Semiconductor Heterostructures

      • G. Abstreiter
      Pages 425-459

    2. Electronic Properties of Semiconductor Heterostructures in a Magnetic Field

      • L. L. Chang
      Pages 461-497

    3. Modulation Doping of Semiconductor Heterostructures

      • A. C. Gossard
      Pages 499-531

    4. Doping Superlattices

      • Klaus Ploog
      Pages 533-574

  8. Alternative Epitaxy

    1. Metal Organic Chemical Vapor Deposition

      • J. P. Duchemin, S. Hersee, M. Razeghi, M. A. Poisson
      Pages 677-719
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Keywords

About this book

The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re­ search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova­ tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ­ ing its use in the growth of a variety of semiconductors and heteros­ tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two­ dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec­ tors.

Editors and Affiliations

  • IBM T.J. Watson Research Center, Yorktown Heights, USA

    Leroy L. Chang

  • Max-Planck-lnstitute, Stuttgart 80, Germany

    Klaus Ploog

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