Abstract
The superlattices are artificial semiconductors obtained by stacking alternatively layers of two host semiconductors A and B. In this lecture we incorporate the superlattice effect into a Kane type analysis of the hosts band structure assuming flat band condition. Various limits are analyzed and specific examples are presented. We also discuss the in-plane electron motion within an approximate scheme. Optical selection rules for interband transitions are derived and we show that in type II structures (e.g. InAs-GaSb) the optical matrix element strongly depends on the superlattice wavevector. Impurities and excitons effects in isolated quantum wells are briefly outlined.
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© 1985 Martinus Nijhoff Publishers, Dordrecht
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Bastard, G. (1985). Envelope Function Approach to the Superlattices Band Structure. In: Chang, L.L., Ploog, K. (eds) Molecular Beam Epitaxy and Heterostructures. NATO ASI Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5073-3_11
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DOI: https://doi.org/10.1007/978-94-009-5073-3_11
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