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Light Scattering In Semiconductor Heterostructures

  • Chapter
Molecular Beam Epitaxy and Heterostructures

Part of the book series: NATO ASI Series ((NSSE,volume 87))

Abstract

We discuss the application of light scattering spectroscopy for the investigation of semiconductor thin films, heterostructures, and multilayer systems. Some aspects of the theory of phonon Raman scattering and of light scattering by free carrier excitations are presented. Special emphasis is made on the difference between two- and three-dimensional systems. The properties of the studied semiconductor systems are discussed together with the scattering geometries and the Raman spectrometer. The experimental results cover various different effects which allow the determination of electrical, structural or compositional properties of semiconductor heterojunctions. The quantization of carriers in multi-quantum well structures and at semiconductor surfaces and interfaces is investigated for several systems. The discussion of the tunable optical and electrical properties of doping superlattices closes this review.

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Author information

Authors and Affiliations

  1. Physik-Department, Technische Universität München, 8046, Garching, Fed. Rep. of Germany

    G. Abstreiter

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  1. G. Abstreiter
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Editor information

Editors and Affiliations

  1. IBM T.J. Watson Research Center, Yorktown Heights, 10598, NY, USA

    Leroy L. Chang

  2. Max-Planck-lnstitute, D-7000, Stuttgart 80, Germany

    Klaus Ploog

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© 1985 Martinus Nijhoff Publishers, Dordrecht

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Abstreiter, G. (1985). Light Scattering In Semiconductor Heterostructures. In: Chang, L.L., Ploog, K. (eds) Molecular Beam Epitaxy and Heterostructures. NATO ASI Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5073-3_12

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  • DOI: https://doi.org/10.1007/978-94-009-5073-3_12

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-8744-5

  • Online ISBN: 978-94-009-5073-3

  • eBook Packages: Springer Book Archive

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