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Electronic Properties of Semiconductor Heterostructures in a Magnetic Field

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Molecular Beam Epitaxy and Heterostructures

Part of the book series: NATO ASI Series ((NSSE,volume 87))

Abstract

This work is devoted to the electronic properties of semiconductor heterostructures under the application of a magnetic field. The focus is on the quantum regime where the heterostructure potential results in electric subbands and the field gives rise to Landau levels. Experiments are reviewed to demonstrate the unique capability of the magnetic field for the investigation of electron systems with reduced dimensionality.

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© 1985 Martinus Nijhoff Publishers, Dordrecht

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Chang, L.L. (1985). Electronic Properties of Semiconductor Heterostructures in a Magnetic Field. In: Chang, L.L., Ploog, K. (eds) Molecular Beam Epitaxy and Heterostructures. NATO ASI Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5073-3_13

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  • DOI: https://doi.org/10.1007/978-94-009-5073-3_13

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