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Silicon Molecular Beam Epitaxy

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Molecular Beam Epitaxy and Heterostructures

Part of the book series: NATO ASI Series ((NSSE,volume 87))

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Abstract

This paper gives a review of our experience in the past four years with Silicon Molecular Beam Epitaxy. First, our equipment for Si-MBE is discussed along with two new methods for surface preparation, then comes the determination of the lowest epitaxial temperatures on Si(111) and Si(100) surfaces; results of doping by off-line ion implantation and of Si-MBE on GaP are given. Where appropriate a comparison is made to other work and the bibliography may serve as a guide through other literature.

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Author information

Authors and Affiliations

  1. FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ, Amsterdam, The Netherlands

    F. W. Saris & T. de Jong

Authors
  1. F. W. Saris
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  2. T. de Jong
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Editor information

Editors and Affiliations

  1. IBM T.J. Watson Research Center, Yorktown Heights, 10598, NY, USA

    Leroy L. Chang

  2. Max-Planck-lnstitute, D-7000, Stuttgart 80, Germany

    Klaus Ploog

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© 1985 Martinus Nijhoff Publishers, Dordrecht

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Saris, F.W., de Jong, T. (1985). Silicon Molecular Beam Epitaxy. In: Chang, L.L., Ploog, K. (eds) Molecular Beam Epitaxy and Heterostructures. NATO ASI Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5073-3_8

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  • DOI: https://doi.org/10.1007/978-94-009-5073-3_8

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-8744-5

  • Online ISBN: 978-94-009-5073-3

  • eBook Packages: Springer Book Archive

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