Physical and Technical Problems of SOI Structures and Devices

  • J. P. Colinge
  • V. S. Lysenko
  • A. N. Nazarov

Part of the NATO ASI Series book series (ASHT, volume 4)

Table of contents

  1. Front Matter
    Pages i-x
  2. SOI Materials

    1. Front Matter
      Pages 1-1
    2. A. J. Auberton-Hervé, B. Aspar, J. L. Pelloie
      Pages 3-14
    3. V. P. Bondarenko, A. M. Dorofeev
      Pages 15-26
    4. E. I. Givargizov, V. A. Loukin, A. B. Limanov
      Pages 27-38
    5. Wolfgang Skorupa
      Pages 39-54
    6. V. G. Litovchenko, B. N. Romanyuk, A. A. Efremov, V. P. Mel’nik
      Pages 73-78
    7. N. I. Koshelev, A. I. Ermolaeva, V. Z. Petrova
      Pages 87-92
    8. A. A. Druzhinin, V. G. Kostur, I. T. Kogut, I. M. Pankevitch, Y. L. Deschinsky
      Pages 101-106
  3. SOI Materials Characterization Techniques

    1. Front Matter
      Pages 107-107
    2. V. G. Litovchenko, I. P. Lisovskii, V. B. Lozinskii, B. N. Romanyuk, V. P. Melnik
      Pages 157-162
    3. P. A. Aleksandrov, E. K. Baranova, I. V. Baranova, V. V. Budaragin, V. L. Litvinov
      Pages 163-168
  4. SOI Devices

    1. Front Matter
      Pages 181-181
    2. S. D. Brotherton, J. R. Ayres, D. J. McCulloch, N. D. Young
      Pages 183-198
    3. D. E. Ioannou
      Pages 199-210
    4. C. J. Patel, N. D. Jankovic, J-P Colinge
      Pages 211-216
    5. G. G. Voronin, L. V. Degtyarenko, I. G. Lukitsa, V. G. Malinin, V. V. Starkov, Y. V. Fedorovitch et al.
      Pages 241-246
    6. N. B. Lukyanchikova, M. V. Petrichuk, N. P. Garbar, E. Simoen, C. Claeys
      Pages 247-252
  5. SOI Circuits

    1. Front Matter
      Pages 253-253
    2. V. P. Bondarenko, Y. V. Bogatirev, L. N. Dolgyi, A. M. Dorofeev, A. K. Panfilenko, S. V. Shvedov et al.
      Pages 275-280
    3. V. A. Voronin, I. I. Maryamova, A. A. Druzhinin, E. N. Lavitska, Y. M. Pankov
      Pages 281-286
  6. Back Matter
    Pages 287-290

About this book


In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.


CMOS Laser Sensor Transistor crystal integrated circuit thin film

Editors and affiliations

  • J. P. Colinge
    • 1
  • V. S. Lysenko
  • A. N. Nazarov
    • 2
  1. 1.Maxwell-DICEUniversité Catholique de LouvainLouvain-la-NeuveBelgium
  2. 2.Institute of Semiconductor PhysicsUkrainian Academy of SciencesKievUkraine

Bibliographic information

  • DOI
  • Copyright Information Kluwer Academic Publishers 1995
  • Publisher Name Springer, Dordrecht
  • eBook Packages Springer Book Archive
  • Print ISBN 978-94-010-4052-5
  • Online ISBN 978-94-011-0109-7
  • Series Print ISSN 1388-6576
  • Buy this book on publisher's site
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