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Physical and Technical Problems of SOI Structures and Devices

  • Book
  • © 1995

Overview

Editors:
  1. J. P. Colinge

    1. Maxwell-DICE, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

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  2. V. S. Lysenko
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  3. A. N. Nazarov

    1. Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Kiev, Ukraine

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Part of the book series: NATO Science Partnership Subseries: 3 (ASHT, volume 4)

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Table of contents (25 chapters)

  1. Front Matter

    Pages i-x
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  2. SOI Materials

    1. Front Matter

      Pages 1-1
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    2. Low dose SIMOX for ULSI applications

      • A. J. Auberton-Hervé, B. Aspar, J. L. Pelloie
      Pages 3-14

    3. Why Porous Silicon for SOI?

      • V. P. Bondarenko, A. M. Dorofeev
      Pages 15-26

    4. Defect Engineering in SOI Films Prepared by Zone-Melting Recrystallization

      • E. I. Givargizov, V. A. Loukin, A. B. Limanov
      Pages 27-38

    5. Ion Beam Processing for Silicon-on-Insulator

      • Wolfgang Skorupa
      Pages 39-54

    6. Semi-Insulating Oxygen-Doped Silicon by Low Temperature Chemical Vapor Deposition for SOI Applications

      • J. C. Sturm, P. V. Schwartz, Z. Liliental-Weber
      Pages 55-66

    7. Direct Formation of Thin Film Nitride Structures by High Intensity Ion Implantation of Nitrogen into Silicon

      • Rossen Yankov, Fadey Komarov
      Pages 67-72

    8. Stimulated Technology for Implanted SOI Formation

      • V. G. Litovchenko, B. N. Romanyuk, A. A. Efremov, V. P. Mel’nik
      Pages 73-78

    9. Behaviour of Oxygen and Nitrogen Atoms Sequentially Implanted into Silicon

      • A. B. Danilin
      Pages 79-86

    10. SOI Fabrication by Silicon Wafer Bonding with the Help of Glass-Layer Fusion

      • N. I. Koshelev, A. I. Ermolaeva, V. Z. Petrova
      Pages 87-92

    11. Crystallization of a-Si Films on Glasses by Multipulse-Excimer-Laser Technique

      • A. B. Limanov
      Pages 93-100

    12. Microzone Laser Recrystallized Polysilicon Layers on Insulator

      • A. A. Druzhinin, V. G. Kostur, I. T. Kogut, I. M. Pankevitch, Y. L. Deschinsky
      Pages 101-106

  3. SOI Materials Characterization Techniques

    1. Front Matter

      Pages 107-107
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    2. Electrical Characterization Techniques for Silicon on Insulator Materials and Devices

      • Sorin Cristoloveanu
      Pages 109-132

    3. The Defect Structure of Buried Oxide Layers in SIMOX and BESOI Structures

      • A. G. Revesz, H. L. Hughes
      Pages 133-156

    4. IR Study of Buried Layer Structure on Different Stages of Technology

      • V. G. Litovchenko, I. P. Lisovskii, V. B. Lozinskii, B. N. Romanyuk, V. P. Melnik
      Pages 157-162

    5. Optical Investigation of Silicon Implanted with High Doses of Oxygen and Hydrogen Ions

      • P. A. Aleksandrov, E. K. Baranova, I. V. Baranova, V. V. Budaragin, V. L. Litvinov
      Pages 163-168

    6. Electrical Properties of ZMR SOI Structures: Characterization Techniques and Experimental Results

      • T. E. Rudenko, A. N. Rudenko, V. S. Lysenko
      Pages 169-180

  4. SOI Devices

    1. Front Matter

      Pages 181-181
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Keywords

About this book

In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.

Editors and Affiliations

  • Maxwell-DICE, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

    J. P. Colinge

  • Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Kiev, Ukraine

    A. N. Nazarov

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