Abstract
In this paper the growth of crystalline silicon layers with large amounts of oxygen (~1020 cm−3) by low temperature chemical vapor deposition is described. These layers have semi-insulating electrical properties with resistivities as large as 106 Ω-cm at room temperature and exhibit the classic characteristics of a space-charge limited current in an insulator with many deep traps. Single crystal SOI layers without oxygen were grown on top of the semi-insulating layers. P-channel MOSFET’s fabricated in these films had characteristics above threshold similar to bulk control samples, although their subthreshold characteristics were degraded.
Keywords
- Chemical Vapor Deposition
- SiGe Layer
- Control Wafer
- Subthreshold Characteristic
- Chemical Vapor Deposition Chamber
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© 1995 Springer Science+Business Media Dordrecht
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Sturm, J.C., Schwartz, P.V., Liliental-Weber, Z. (1995). Semi-Insulating Oxygen-Doped Silicon by Low Temperature Chemical Vapor Deposition for SOI Applications. In: Colinge, J.P., Lysenko, V.S., Nazarov, A.N. (eds) Physical and Technical Problems of SOI Structures and Devices. NATO ASI Series, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0109-7_5
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DOI: https://doi.org/10.1007/978-94-011-0109-7_5
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