Abstract
Most operations of microelectronic technology are based on heterogeneous reactions taking place at “Working media (solution, gas, plasma etc) / semiconductor surface” interface. Activation of these reactions is usually performed by changing the “Working media” parameters (temperature, pressure, electromagnetic stimulation etc).
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Bondarenko, V.P., Dorofeev, A.M. (1995). Why Porous Silicon for SOI?. In: Colinge, J.P., Lysenko, V.S., Nazarov, A.N. (eds) Physical and Technical Problems of SOI Structures and Devices. NATO ASI Series, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0109-7_2
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DOI: https://doi.org/10.1007/978-94-011-0109-7_2
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