Abstract
SOI technology has reached a stage of rapid and successful development. A major condition for competing with bulk silicon in commercial applications is the degree of understanding of material properties and device operation. This implies the use of adequate characterization techniques which overcome the difficulties induced by the thinness of the film and by the stacked interfaces. Since the quality of SOI structures has great impact on the performance of circuits integrated on them, device-based characterization is very suitable for exploring the properties of the starting material.
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Cristoloveanu, S. (1995). Electrical Characterization Techniques for Silicon on Insulator Materials and Devices. In: Colinge, J.P., Lysenko, V.S., Nazarov, A.N. (eds) Physical and Technical Problems of SOI Structures and Devices. NATO ASI Series, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0109-7_12
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DOI: https://doi.org/10.1007/978-94-011-0109-7_12
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