Abstract
This paper is a brief review of recent experiments dealing with elaboration of a new SOI technology based on sequential implantation of oxygen and nitrogen ions into silicon. We have shown that annealing causes mutual redistribution and coaggregation of the atoms. Implantation with similar energies of ions ensures a high efficiency of ion beam synthesis in a thin layer, produces a buried dielectric layer at lower implantation doses and requires shorter annealing time and lower temperature than for SIMOX technology. The process of heterogeneous ion beam synthesis proves to be quite sensitive to the parameters and conditions of implantation and annealing. Methods of optimising ion beam synthesis have been proposed. The phase composition of the dielectric layers has been characterised.
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Danilin, A.B. (1995). Behaviour of Oxygen and Nitrogen Atoms Sequentially Implanted into Silicon. In: Colinge, J.P., Lysenko, V.S., Nazarov, A.N. (eds) Physical and Technical Problems of SOI Structures and Devices. NATO ASI Series, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0109-7_8
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DOI: https://doi.org/10.1007/978-94-011-0109-7_8
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