Abstract
During the last few years ion beam processing penetrated very aggressively in many branches of advanced solid state technology. This holds also for the modern semiconductor technology in the area of VLSI (Very Large Scale Integration) and ULSI (Ultra Large Scale Integration). SOI (Silicon-on-Insulator) is one of the most discussed candidates of this branch offering the possibility to produce integrated circuits of high packing density, low power consumption and high speed.
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References
Roulet, M.E., Schwob, P., and Golecki, I. (1979) , Electron. Lett. 15, 527.
Yoshii, T., Taguchi, S., Inoue, T., and Tango, H. (1982), Jpn. J. Appl.Phys.2l, 175.
Imai, K., and Unno, H. (1984), IEEE Trans. Electron. Dev. ED-31, 297.
Benjamin, J. D., Keen, J.M., Cullis, A.G., Innes, B., and Chew, N.G. (1986),Appl. Phys. Lett. 49, 716.
Priolo, F., and Rimini, E. (1990), Materials Science Reports 5, 319.
Heera, V. (1989), phys. stat. sol. (a) 114, 599.
7a. La Ferla, A., Rimini, E., and Ferla, G. (1988), Appl. Phys. Lett. 52, 712.
Skorupa, W., Voelskow, M., Matthäi, J., and Knothe, P. (1988), Electron. Lett. 24, 876.
Ishiwara, H., Asano, T., Tsutsui, K., Lee, H.C., and Furukawa, S. (1988), Mat. Res. Soc. Symp. Proc. 107, 241.
Voelskow, M., Skorupa, W., Wollschläger, K., Matthäi, J., Knothe, P., Heinig, K.-H., and Bartsch, H. (1989), Appl. Surf. Sc. 43, 196.
Reif, R., and Knott, J.E. (1981), Electron. Lett. 17, 587.
Kung, K.T.-Y., and Reif, R. (1987), J. Appl. Phys. 62, 1503 and references therein.
Kung, K.T.-Y., and Reif, R. (1988), J. Appl. Phys. 63, 2131.
For state-of-the-art see: (1988), Mat. Res. Soc. Symp. Proc. 107; Biennal SOI-Symposia of the Electrochemical Soc. 1984–1994; SOS-SOI workshops of the IEEE (Institution of Electrical and Electronic Engineers).
Skorupa, W., Grötzschel, R., and Bartsch, H. (1989), phys. stat. sol. (a) 1 1 2 , 661.
Colinge, J.P. (1991), Silicon-on-Insulator: Materials to VLSI, Kluwer Academic Publishers, Dordrecht.
Colinge, J.P. (1988), IEEE Electron. Dev. Lett. 9, 97.
Hemment, P.L.F., Peart, R.F., Yao, M.F., Stephens, K.G., Arrowshmith, R.P., Chater, R.J., and Kilner, J.F. (1985), Nucl. Instr. Meth. B6, 292.
Skorupa, W., Kreißig, U., Wollschläger, K., Hensel, E., and Bartsch, H. (1985), ZfK-Annual Report 1984 559, 96.
Reeson, K.J., Hemment, P.L.F., Meekison, C.D., Marsh, C.D., Booker, G.R., Chater, R.J., Kilner, J.A., and Davis, J. (1988), Nucl. Instr. Meth. B32, 427.
Skorupa, W., Wollschläger, K., Grötzschel, R., Schöneich, J., Hentschel, E . , Kotte, R., Stary, F., Bartsch, H., and Goetz, G. (1988), Nucl. Instr. Meth. B32, 440.
DeVeirman, A., Van Laduyt, J., and Skorupa, W. (1991), Philosopical Magazine A64, 513.
Skorupa, W., Schöneich, A., Grötzschel, R., Wollschläger, K., and Vöhse, H. (1992), Mat. Sc. Eng. B12, 63.
Skorupa, W., Grötzschel, R., Wollschläger, K., Albrecht, J., and Vöhse, H (1992), Mat. Res. Soc. Symp. Proc. 235, 127.
Skorupa, W., Kreissig, U., Hensel, E., and Bartsch, H. (1984), Electron. Lett. 20, 426.
Skorupa, W., Knothe, P., and Grötzschel, R. (1988), Nucl. Instr. Meth. B 3 4 , 523.
Skorupa, W., Knothe, P., and Grötzschel, R. (1988), Electron. Lett. 24, 464.
Delfino, M., Jaczynski, M., Morgan, A.E., Vorst, C., Lunnon, M.E., and Maillot, P. (1987), J. Electrochem. Soc. 134, 2027.
Kamins, T.I.and Chiang, S.Y. (1989), J. Appl. Phys. 58, 2559.
Jablonski, J., Miyamura, Y., Imai, M., and Tsuya, H. (1994), Silicon-on-Insulator Technology and Devices, S. Cristoloveanu (ed.), ECS-Proc. 94–11, The Electrochem. Soc., Inc. Pennington.
Borland, J.Ogawa (1994), personal communication.
Skorupa, W., Kögler, R., Schmalz, K., and Bartsch, H. (1991), Nucl. Instr.Meth. B55, 224.
Skorupa, W., Kögler, R., Schmalz, K., Gaworzewski, P., Morgenstern, G . ,and Syhre, H. (1993), Nucl. Instr. Meth. B74, 70.
Myers, S.M., Follstaedt, D.M., and Bishop, D.M. (1994), Mat. Res. Soc. Symp. Proc. 316, 33.
Yamada, I. (1990), Energy Pulse and Particle Beam Modification of Materials, K. Hohmuth and E. Richter (eds.), Physical Research 13, Akademie Verlag, Berlin.
Kamins, T.I., Wang, K.L., Park, J., and Davis, G.E. (1989), J. Appl. Phys. 65, 1505.
Das, K., Humphreys, T.P., Posthill, J.B., Parikh, N., Tarn, J., ElMasry, N . , Bedair, S.M., Chu, W.K., and Wortman, J.J. (1988), Mat. Res. Soc. Symp. Proc. 107, 513.
Iyer, S.S. (1994), Th Electrochem. Soc. Spring Mtg. 94–1, Ext. Abstr.No.439.
Maszara, W.P.,Pronko, P.P.,McCormick, A.W. (1991), Appl.Phys.Lett.68, 2779.
Stoev, I.G., Yankov, R.A., and Jeynes, C. (1989), Sensors and Actuators 19, 183.
Feijoo, D., Lehmann, V., Mitani, K., and Gösele, U.M. (1992), J.Electrochem.Soc. 139, 2309.
Tong, Q.-Y., You, H.-M., Cha, G., and Gösele, U.M. (1993), Appl. Phys. Lett.62, 970.
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Skorupa, W. (1995). Ion Beam Processing for Silicon-on-Insulator. In: Colinge, J.P., Lysenko, V.S., Nazarov, A.N. (eds) Physical and Technical Problems of SOI Structures and Devices. NATO ASI Series, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0109-7_4
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DOI: https://doi.org/10.1007/978-94-011-0109-7_4
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