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Secondary Ion Mass Spectrometry SIMS V

Proceedings of the Fifth International Conference, Washington, DC, September 30 – October 4, 1985

  • Conference proceedings
  • © 1986

Overview

Editors:
  1. Alfred Benninghoven

    1. Physikalisches Institut, Universität Münster, Münster, Fed. Rep. of Germany

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  2. Richard J. Colton

    1. Chemistry Division, Naval Research Laboratory, USA

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  3. David S. Simons

    1. Center for Analytical Chemistry, National Bureau of Standards, Gaithersburg, USA

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  4. Helmut W. Werner

    1. Philips Research Laboratories, NL-Eindhoven, The Netherlands

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Part of the book series: Springer Series in Chemical Physics (CHEMICAL, volume 44)

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Table of contents (149 papers)

  1. Symposium: Detection of Sputtered Neutrals

    1. Glow Discharge Mass Spectrometry

      • W. W. Harrison, K. R. Hess, R. K. Marcus, F. L. King
      Pages 75-78

    2. Electron Beam Postionization of Sputtered Neutrals

      • O. Ganschow
      Pages 79-84

    3. General Postionization of Sputtered and Desorbed Species by Intense Untuned Radiation

      • C. H. Becker, K. T. Gillen
      Pages 85-89

    4. Multi-Photon Resonance Ionization of Emitted Particles

      • G. A. Schick, J. P. Baxter, J. Subbiah-Singh, P. H. Kobrin, N. Winograd
      Pages 90-93

    5. Post-Ionization of Sputtered Particles: A Brief Review

      • W. Reuter
      Pages 94-102

    6. Quantitatve Analysis Using Sputtered Neutrals in an Ion Microanalyser

      • P. Williams
      Pages 103-104

    7. Quantitative Analysis of Iron and Steel by Mass Spectrometry

      • J. Dittmann, F. Leiber, J. Tümpner, A. Benninghoven
      Pages 105-107

    8. Ion Microprobe Mass Spectrometry Using Sputtering Atomization and Resonance Ionization

      • D. L. Donohue, W. H. Christie, D. E. Goeringer
      Pages 108-110

  2. Detection Limits and Quantification

    1. Front Matter

      Pages 111-111
      Download chapter PDF

    2. Memory Effects in Quadrupole SIMS

      • J. B. Clegg
      Pages 112-114

    3. Correction for Residual Gas Background in SIMS Analysis

      • G. J. Scilla
      Pages 115-117

    4. Cross — Calibration of SIMS Instruments for Analysis of Metals and Semiconductors

      • F. G. Rüdenauer, W. Steiger, M. Riedel, H. E. Beske, H. Holzbrecher, H. Düsterhöft et al.
      Pages 118-120

    5. On-Line Ion Implantation: The SIMS Primary Ion Beam for Creation of Empirical Quantification Standards

      • H. E. Smith, M. T. Bernius, G. H. Morrison
      Pages 121-123

    6. Matrix Effects in the Quantitative Elemental Analysis of Plastic-Embedded and Ashed Biological Tissue by SIMS

      • J. T. Brenna, G. H. Morrison
      Pages 124-126

    7. Reproducible Quantitative SIMS Analysis of Semiconductors in the Cameca IMS 3F

      • G. D. T. Spiller, T. Ambridge
      Pages 127-129

  3. Instrumentation

    1. Front Matter

      Pages 131-131
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    2. Imaging SIMS at 20 nm Lateral Resolution: Exploratory Research Applications

      • R. Levi-Setti, G. Crow, Y. L. Wang
      Pages 132-138

    3. Use of a Compact Cs Gun Together with a Liquid Metal Ion Source for High Sensitivity Submicron SIMS

      • Tsuyoshi Okutani, T. Shinomiya, M. Ohshima, T. Noda, H. Tamura, H. Watanabe
      Pages 139-141

    4. Secondary Ion Mass Spectrometer with Liquid Metal Field Ion Source and Quadrupole Mass Analyzer

      • J. M. Schroeer, J. Puretz
      Pages 142-145

    5. Evaluation of a New Cesium Ion Source for SIMS

      • D. G. Welkie
      Pages 146-148
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Keywords

Editors and Affiliations

  • Physikalisches Institut, Universität Münster, Münster, Fed. Rep. of Germany

    Alfred Benninghoven

  • Chemistry Division, Naval Research Laboratory, USA

    Richard J. Colton

  • Center for Analytical Chemistry, National Bureau of Standards, Gaithersburg, USA

    David S. Simons

  • Philips Research Laboratories, NL-Eindhoven, The Netherlands

    Helmut W. Werner

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