Reproducible Quantitative SIMS Analysis of Semiconductors in the Cameca IMS 3F

  • G. D. T. Spiller
  • T. Ambridge
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 44)

Abstract

The use of ion-implanted standards for the quantification of SIMS depth profiles is well established [1]. The absolute accuracy obtainable depends on the accuracy with which the implanted dose is known (either from accurate dosimetry on the implanter or from independent calibration of the specimens), but the experimental errors involved in making SIMS measurements also need to be assessed.

Keywords

GaAs Tantalum 

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References

  1. 1.
    Newbury D E and Simons D, SIMS IV: p101 (1983)Google Scholar
  2. 2.
    Holland R and Blackmore G W, Surface and Interface Analysis 4: p174 (1982)CrossRefGoogle Scholar
  3. 3.
    Blattner R J and Evans C A; SEM Conference: p55 (1980)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • G. D. T. Spiller
    • 1
  • T. Ambridge
    • 1
  1. 1.British Telecom Research LaboratoriesIpswichUK

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