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Transport in Metal-Oxide-Semiconductor Structures

Mobile Ions Effects on the Oxide Properties

  • HamidĀ Bentarzi

Part of the Engineering Materials book series (ENG.MAT.)

Table of contents

  1. Front Matter
    Pages i-xiii
  2. Hamid Bentarzi
    Pages 1-4
  3. Hamid Bentarzi
    Pages 5-16
  4. Hamid Bentarzi
    Pages 17-28
  5. Hamid Bentarzi
    Pages 39-58
  6. Back Matter
    Pages 103-104

About this book

Introduction

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Keywords

Ionic transport mechanism MOS Silicon dioxide density distribution

Authors and affiliations

  • HamidĀ Bentarzi
    • 1
  1. 1., Dept.of Electrical Engineering and ElectUniversity of BoumerdesBoumerdesAlgeria

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-16304-3
  • Copyright Information Springer-Verlag Berlin Heidelberg 2011
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-3-642-16303-6
  • Online ISBN 978-3-642-16304-3
  • Series Print ISSN 1612-1317
  • Series Online ISSN 1868-1212
  • Buy this book on publisher's site
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