Abstract
The electrical methods, such as Bias Thermal Stress (BTS) using High Frequency Capacitance–Voltage (C–V) measurement and triangular voltage sweep (TVS) which are the most sensitive methods to detect and measure mobile ions concentration, are described in this chapter. These techniques are most commonly used because of their simplicity in use and analysis. Besides, another method called Thermally Stimulated Ionic Current (TSIC) method, which is useful mainly for research studies of ion emission from the silicon and the gate electrodes, is also discussed. Finally, our electrical method, using Charge-Pumping (CP) technique under BTS, which has been recently developed, is also presented in this chapter. The last technique is based on the measurement of the flat-band voltage before and after an applied voltage at high temperature using charge-pumping current. The measured flat band voltage shift that may be partially due to redistribution of the mobile ions can be used to detect and measure mobile ion concentration.
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Bentarzi, H. (2011). Experimental Techniques. In: Transport in Metal-Oxide-Semiconductor Structures. Engineering Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-16304-3_5
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DOI: https://doi.org/10.1007/978-3-642-16304-3_5
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