Abstract
A theoretical model of ion distribution, which is based on the concept that the equilibrium concentration of the ions is obtained when the combined mobilizing forces, namely, thermal diffusion, internal, and external electric fields, has been discussed. In order to validate the present theoretical model, the flat-band-voltage shift ΔVFB, which is due to the presence of the ionic oxide charge, has been calculated and compared with the experimental value. To further test the validity of this model, the ionic current–voltage characteristic has also been determined and compared with the experimental one by applying a slow linear ramp voltage to the gate at high temperature (TVS technique). An agreement between the experimental and computed data provides a support that gives easier formulation to apply for determining the flat-band-voltage shift ΔVFB due to the effect of this oxide charge type as well as deriving the theoretical ionic I–V characteristic.
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Bentarzi, H. (2011). Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide. In: Transport in Metal-Oxide-Semiconductor Structures. Engineering Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-16304-3_7
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DOI: https://doi.org/10.1007/978-3-642-16304-3_7
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