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Technology CAD — Computer Simulation of IC Processes and Devices

  • Book
  • © 1993

Overview

Authors:
  1. Robert W. Dutton

    1. Stanford University, USA

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    You can also search for this author in PubMed   Google Scholar

  2. Zhiping Yu

    1. Tsinghua University, China

    View author publications

    You can also search for this author in PubMed   Google Scholar

Part of the book series: The Springer International Series in Engineering and Computer Science (SECS, volume 243)

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Table of contents (7 chapters)

  1. Front Matter

    Pages i-xvi
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  2. Technology-Oriented CAD

    • Robert W. Dutton, Zhiping Yu
    Pages 1-36

  3. Introduction to SUPREM

    • Robert W. Dutton, Zhiping Yu
    Pages 37-85

  4. Device CAD

    • Robert W. Dutton, Zhiping Yu
    Pages 87-130

  5. PN Junctions

    • Robert W. Dutton, Zhiping Yu
    Pages 131-195

  6. MOS Structures

    • Robert W. Dutton, Zhiping Yu
    Pages 197-242

  7. Bipolar Transistors

    • Robert W. Dutton, Zhiping Yu
    Pages 243-294

  8. BiCMOS Technology

    • Robert W. Dutton, Zhiping Yu
    Pages 295-316

  9. Back Matter

    Pages 317-373
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About this book

129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium .......... . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects ..... . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction ............. . 197 5.2 The MOS Capacitor ........ . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction ... 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis ... 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model ...

Authors and Affiliations

  • Stanford University, USA

    Robert W. Dutton

  • Tsinghua University, China

    Zhiping Yu

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