Abstract
Device and circuit design involve detailed understanding of device models. For both these design stages, details such as the role of substrate doping on threshold voltage and capacitances of MOSFETs must be characterized in terms of parametric equations.
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References
Z. Yu and R. W. Dutton, “SEDAN III-A generalized electronic material device analysis program,” Stanford University Electronics Laboratories Technical Report, July 1985.
M. R. Pinto, C. S. Rafferty, H. R. Yeager, and R. W. Dutton, “PISCES — IIB,” Stanford University Integrated Circuits Laboratory Technical Report, 1985.
R.B.Marcus, “Chapter 12: Diagnostic Techniques,” VLSI Technology, edited by S. M. Sze, McGraw-Hill Book Co., New York, 1983.
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© 1993 Springer Science+Business Media New York
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Dutton, R.W., Yu, Z. (1993). Device CAD. In: Technology CAD — Computer Simulation of IC Processes and Devices. The Springer International Series in Engineering and Computer Science, vol 243. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3208-8_3
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DOI: https://doi.org/10.1007/978-1-4615-3208-8_3
Publisher Name: Springer, Boston, MA
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