Abstract
While the exact form that VLSI technology would take in the future was uncertain in late 1970s, it seemed evident that costly and time- consuming empirical approaches to developing and optimizing such technology are a luxury few will be able to afford or wish to justify. A far more attractive alternative is the formulation of accurate models of the basic physical processes involved, and their implementation in a comprehensive computer program. Such a program would allow predictions of device structures resulting from any proposed fabrication sequence and would minimize the need for empirical iterative attempts. Since its inception, the process simulator SUPREM has been one such attempt to realize this goal. Beginning with SUPREM I and proceeding to SUPREM II and III, each version has drawn from the models and physical understanding of fabrication processes then available.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
S. Selberherr, Analysis and Simulation of Semiconductor Devices, New York, Springer-Verlag, 1984.
J. W. Mayer, L. Erikson, and J. A. Davies, Ion Implantation in Semiconductors, New York, Academic Press, 1974.
J. Gibbons and S. Mylroie, “Estimation of impurity profiles in ion-implanted amorphous targets using joined half-Gaussian distributions,” Appl. Phys. Lett., 22, pp. 568–569, June 1973.
W. K. Hofker, D. P. Oosthoek, N. J. Koelman, and H. A. M. De Grefte, Radiation Effects, 24, p. 223, 1975.
H. Ryssel, H. Kranz, K. Muller, R. A. Henkelmann, and J. Biersack, “Comparison of range and range straggling of implanted 10B and 11B in silicon,” Appl. Phys. Lett., 30, pp. 399–401, April 1977.
L. A. Christel, J. F. Gibbons, and S. Mylroie, “Application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets,” J. Appl. Phys., 51, pp. 6176–6182, December 1980.
G. Hobler, and S. Selberherr, “Monte Carlo simulation of ion implantation in two-and three-dimensional structures,” IEEE Trans. CAD, Vol. 8, No. 5, p. 450–459, May 1989.
B. J. Mulvaney, W. B. Richardson, and T. L. Crandle, “PEPPER-A process simulator for VLSI,” IEEE Trans. CAD, Vol. 8, No. 4, pp-3336–349, April 1989.
B. E. Deal and A. S. Grove, “General relationship for the thermal oxidation of silicon,” J. Appl. Phys., 36, p. 3770, 1965.
J. D. Plummer, “The Role of the Si/SiO2 interface in silicon oxidation kinetics,” Electrochem. Soc. Semiconductor Silicon, 1981, pp. 445–454, May 1981.
R. B. Fair, “Oxidation, impurity Diffusion, and defect growth in silicon — An overview,” J. Electrochem. Soc., 128, p. 1360, June 1981.
S. M. Hu, “Formation of stacking faults and enhanced diffusion in the oxidation of silicon,” J. Appl. Phys., 45, pp. 1567–1573, April 1974.
W. A. Tiller, “On the kinetics of the thermal oxidation of silicon, l.A Theoretical perspective,” J. Electrochem. Soc., 127, pp. 619–624, March 1980.
C. P. Ho and J. D. Plummer, “Si-SiO2 interface oxidation kinetics: A physical model for the influence of high substrate doping levels. I. Theory,” J. Electrochem. Soc., 126, pp. 1516–1522, September 1979.
C. P. Ho and J. D. Plummer, “Si-SiO2 interface oxidation kinetics: A physical model for the influence of high substrate doping levels. II. Comparison with experiment and discussion,” J. Electrochem. Soc., 126, pp. 1523–1530, September 1979.
P. S. Dobson, “The Effect of oxidation on anomalous diffusion in silicon,” Philosophical Mag., 24, pp. 567–576, 1971.
P. S. Dobson, “The mechanism of impurity diffusion in silicon,” Philosophical Mag., 26, pp. 1301–1306, 1972.
S. P. Murarka, “Role of point defects in the growth of the oxidation-induced stacking fault in silicon,” Phys. Rev. B, Vol. 16, pp. 2849–2857, 1977.
A. M. Lin, R. W. Dutton, D. A. Antoniadis, and W. A. Tiller, “The growth of oxidation stacking faults and the point defect generation at Si-SiO2 interface during thermal oxidation of silicon,” J. Electrochem. Soc., 128, pp. 1121–1130, May 1981.
D. W. Hess and B. E. Deal, “Kinetics of the thermal oxidation of silicon in O2HCI mixtures,” J. Electrochem. Soc., 124, pp. 735–739, May 1977.
B. E. Deal, “Thermal oxidation kinetics of silicon in pyrogenic H2O and 5% HC1 H2O mixtures,” J. Electrochem. Soc., 125, pp. 576–579, April 1978.
R. R. Razouk, L. N. Lie, and B. E. Deal, “Kinetics of high pressure oxidation of silicon in pyrogenic steam,” J. Electrochem. Soc., 128, pp. 2214–1110, Oct. 1981.
L. N. Lie, R. R. Razouk, and B. E. Deal, “High pressure oxidation of silicon in dry oxygen,” J. Electrochem. Soc., 129, pp. 2828–2834, Dec. 1982.
Y. J. van der Meulen, “Kinetics of thermal growth of ultra-thin layers of SiO2 on silicon. I. Experiment,” J. Electrochem. Soc., 119, pp. 530–534, 1972. R. Ghez and Y. J. van der Meulen, “Kinetics of thermal growth of ultra-thin layers of SiO2 on silicon. Part II. Theory,” J. Electrochem. Soc., 119, pp. 1100-1106, 1972.
B. E. Deal and M. Sklar, “Thermal oxidation of heavily doped silicon,” J. Electrochem. Soc., 12, pp. 430–435, April 1965.
W. Shockley and J. L. Moll, “Solubility of flaws in heavily doped semiconductors,” Phys. Rev., 119, pp. 1480–1482, Sept. 1960.
J. A. Van Vechten, and C. D. Thurmond, “Entropy of ionization and temperature variation of ionization levels of defects in semiconductors,” Phys. Rev. B.. 14, p. 3539, October 1976.
R. J. Kriegler, Y. C. Cheng, and D. R. Colton, “The effect of HC1 and Cl2 on the thermal oxidation of silicon,” J. Electrochem. Soc., 119, pp. 388–392, 1972.
P. H. Robinson and F. P. Heiman, “Use of HC1 gettering in silicon device processing,” J. Electrochem. Soc., 118, pp. 141–143, 1971.
C. M. Osburn, “Dielectric breakdown properties of SiO2 films grown in halogen and hydrogen containing environments,” J. Electrochem. Soc., 121, pp. 809–815, 1974.
K. Hirabayashi and J. Iwamura, “Kinetics of thermal growth of HCl-O2 oxides on silicon,” J. Electrochem. Soc., 120, pp. 1595–1601, 1973.
Y. J. Van der Meulen, C. M. Osburn, and J. F. Ziegler, “Properties of SiO2 grown in the presence of HC1 or Cl2,” J. Electrochem. Soc., 122, pp.284–290, 1975.
A. S. Grove, Physics and Technology of Semiconductor Devices, John Wiley and Sons, New York, 1967.
H. Z. Massoud, J. D. Plummer, and E. A. Irene, “Thermal oxidation of silicon in dry oxygen: growth rate enhancement in the thin regime. I. Experimental results,” J. Electrochem. Soc., 132, pp. 2685–2693, Nov. 1985.
P. M. Fahey, P. B. Griffin, and J. D. Plummer, “Point defects and dopant diffusion in silicon,” Reviews of Modern Physics, Vol. 61, No. 2, pp. 289–384, April 1989.
C. P. Ho, S. E. Hansen, P. M. Fahey, “SUPREM III-A Program for Integrated Circuit Process Modeling and Simulation,” Stanford Technical Report, SEL 84-001, July 1984.
M. E. Law and R. W. Dutton, “Verification of analytic point defect models using SUPREM — IV,” IEEE Trans. Computer-Aided Design, Vol. CAD-7, pp. 181–190, Feb. 1988.
R. B, Fair, “Chapter 7: Concentration profiles of diffused dopants in silicon,” Impurity Doping Processes in Silicon, edited by F. F. Y. Wang, North-Holland Pub. Co., Amsterdam, 1981.
D. A. Antoniadis, R. W. Dutton, “Models for computer simulation of complete IC fabrication process,” IEEE Trans. Elect. Dev., Vol. ED-26, No. 4, pp. 490–500, April 1979.
M. Y. Tsai, F. F. Morehead, J. E. E. Baglin, and A. E. Michael, “Shallow junctions by high dose As implants in Si: Experiments and modeling,” J. Appl. Phys., 51, p. 3230, 1980.
T. Kato, Y. Nishi, “Redistribution of diffused boron in silicon by thermal oxidation,” Japan. J. Appl. Phys. 3, p. 377, 1964.
A. M. Lin, D. A. Antoniadis, R. W. Dutton, “The oxidation rate dependence of oxidation-enhanced diffusion of boron and phosphorus in silicon,” J. Electrochem. Soc., 128, p. 1131, May 1981.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1993 Springer Science+Business Media New York
About this chapter
Cite this chapter
Dutton, R.W., Yu, Z. (1993). Introduction to SUPREM. In: Technology CAD — Computer Simulation of IC Processes and Devices. The Springer International Series in Engineering and Computer Science, vol 243. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3208-8_2
Download citation
DOI: https://doi.org/10.1007/978-1-4615-3208-8_2
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-6408-5
Online ISBN: 978-1-4615-3208-8
eBook Packages: Springer Book Archive