17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII)

ISSN: 0361-5235 (Print) 1543-186X (Online)

In this topical collection (34 articles)

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  1. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy

    Takahiro Suzuki, Ryo Yokogawa, Kohei Oasa… Pages 5050-5055

  2. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Determination of Low C Concentration in Czochralski-Grown Si for Solar Cell Applications by Liquid-N-Temperature Photoluminescence After Electron Irradiation

    Michio Tajima, Hirotatsu Kiuchi, Fumito Higuchi… Pages 5056-5060

  3. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

    A. Navarro, O. Martinez, B. Galiana, I. Lombardero… Pages 5061-5067

  4. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Phosphorus Diffusion Gettering Efficacy in Upgraded Metallurgical-Grade Solar Silicon

    A. Jiménez, C. del Cañizo, C. Cid, A. Peral Pages 5068-5071

  5. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Electromagnetic Field Enhancement on Axially Heterostructured NWs: The Role of the Heterojunctions

    J. L. Pura, J. Souto, P. Periwal, T. Baron, J. Jiménez Pages 5072-5076

  6. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells

    L. A. Sánchez, A. Moretón, M. Guada, S. Rodríguez-Conde… Pages 5077-5082

  7. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    M. Gutiérrez, F. Lloret, P. Jurczak, J. Wu, H. Y. Liu… Pages 5083-5086

  8. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Photoluminescent Tomography of Semiconductors by Two-Photon Confocal Microscopy Technique

    V. P. Kalinushkin, O. V. Uvarov, A. A. Gladilin Pages 5087-5091

  9. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Impact of Carbon Codoping on Generation and Dissociation of Boron–Oxygen Defects in Czochralski Silicon

    Meng Xie, Xuegong Yu, Yichao Wu, Deren Yang Pages 5092-5098

  10. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Non-destructive Detection of Screw Dislocations and the Corresponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics

    H. Das, S. Sunkari, H. Naas Pages 5099-5104

  11. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Photoconductivity of Macroporous and Nonporous Silicon with Ultrathin Oxide Layers

    K. P. Konin, Yu. V. Goltvyansky, L. A. Karachevtseva… Pages 5105-5108

  12. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Analysis and Reduction of Obtuse Triangular Defects on 150-mm 4° 4H-SiC Epitaxial Wafers

    Yongqiang Sun, Gan Feng, Junyong Kang, Jianhui Zhang… Pages 5109-5112

  13. No Access

    Topical Collection: 17th Conference on Defects (DRIP XVII)

    Generation and Auto-Revealing of Dislocations in Si During Macropore Etching

    K. P. Konin, O. Yo. Gudymenko, V. P. Klad’ko… Pages 5113-5117

  14. Correction

    Correction to: Generation and Auto-Revealing of Dislocations in Si During Macropore Etching

    K. P. Konin, O. Yo. Gudymenko, V. P. Klad’ko… Page 6334
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