Abstract
In this paper, we have carried out a numerical simulation of FinFETs. The model is based on ID non-equilibrium Green’s function (NEGF) along the channel and 2-D Schrödinger equation in the confined cross section and provides insights into the performance of FinFETs with ultra small channel cross section. The simulation results of FinFETs show normal I—V characteristics with great potential in scalability even when the gate length is below 5 nm with 2-by-2 nm channel cross section.
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References
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© 2004 Springer-Verlag Wien
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Shao, X., Yu, Z. (2004). A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_5
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_5
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
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