Simulation of Semiconductor Processes and Devices 2004

  • Gerhard Wachutka
  • Gabriele Schrag

Table of contents

  1. Front Matter
    Pages i-xii
  2. T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr
    Pages 1-8
  3. Gerhard Klimeck
    Pages 9-12
  4. M. Rudan, E. Gnani, S. Reggiani, G. Baccarani
    Pages 13-16
  5. Ljubo Radic, Antonio F. Saavedra, Mark E. Law
    Pages 33-36
  6. Milan Diebel, Srini Chakravarthi, Scott T. Dunham, Charles F. Machala
    Pages 37-40
  7. C. C. Wang, T. Y. Huang, Y. M. Sheu, Ray Duffy, Anco Heringa, N. E. B. Cowern et al.
    Pages 41-44
  8. A. Pakfar, P. Holliger, A. Poncet, C. Fellous, D. Dutartre, T. Schwartzmann et al.
    Pages 45-48
  9. S. Chakravarthi, P. R. Chidambaram, B. Hornung, C. F. Machala
    Pages 49-52
  10. T. Ezaki, H. Nakamura, T. Yamamoto, K. Takeuchi, M. Hane
    Pages 53-56
  11. Leland Chang, Meikei Ieong, Min Yang
    Pages 57-60
  12. O. Fujii, H. Yoshimura, R. Hasumi, T. Sanuki, H. Oyamatsu, F. Matsuoka et al.
    Pages 61-64
  13. Xinlin Wang, Huiling Shang, Phil Oldiges, Ken Rim, Steve Koester, Meikei Ieong
    Pages 65-68
  14. Jian Li, Robert Hull, Rongsheng Yang, Vincent Hou, Chandra Mouli
    Pages 69-72
  15. A. Sleiman, A. Di Carlo, G. Verzellesi, G. Meneghesso, E. Zanoni
    Pages 81-84
  16. M. Lorenzini, D. Wellekens, L. Haspeslagh, J. Van Houdt
    Pages 89-92
  17. P.-F. Wang, Th. Nirschl, D. Schmitt-Landsiedel, W. Hansch
    Pages 93-96
  18. Robert Thalhammer, Stephan Marksteiner
    Pages 97-100
  19. Joachim Piprek
    Pages 101-108
  20. A. Hössinger, R. Minixhofer, S. Selberherr
    Pages 129-132
  21. W. Jacobs, A. Kersch, G. Prechtl, G. Schulze Icking-Konert
    Pages 137-140
  22. M. Pourfath, E. Ungersboeck, A. Gehring, B. H. Cheong, H. Kosina, S. Selberherr
    Pages 149-152
  23. A. Akturk, G. Pennington, N. Goldsman
    Pages 153-156
  24. Beat Ruhstaller, Tilman A. Beierlein, Roman Gmür, Siegfried Karg, Heike Riel, Guido Sartoris et al.
    Pages 157-160
  25. P.-H. Nguyen, A. Burenkov, J. Lorenz
    Pages 161-164
  26. W. Wessner, C. Hollauer, A. Hössinger, S. Selberherr
    Pages 165-168
  27. R. Wittmann, A. Hössinger, S. Selberherr
    Pages 169-172
  28. F. M. Bufler, A. Schenk, W. Fichtner
    Pages 195-198
  29. L. Yang, J. R. Watling, A. Asenov, J. R. Barker, S. Roy
    Pages 199-202
  30. D. Choudhary, J. Catherwood, P. Clancy, C. S. Murthy
    Pages 203-206
  31. Jung-Hoon Chun, Chang-Hoon Choi, Robert W. Dutton
    Pages 207-210
  32. A. Icaza Deckelmann, G. Wachutka, J. Krumrey, F. Hirler
    Pages 215-218

About these proceedings


This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.


Doping Layout Signal Simulation algorithm device operation device technology fabrication processes modeling numerical analysis numerical simulation optimization physical modeling system performance thin film

Editors and affiliations

  • Gerhard Wachutka
    • 1
  • Gabriele Schrag
    • 1
  1. 1.Lehrstuhl für Technische ElektrophysikTechnische Universität MünchenMunichFederal Republic of Germany

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