Abstract
State-of-the-art high-k multi-gate CMOS technology is introduced in Chap. 2 with special focus on analog device behavior and variability. The specific impact of high-k dielectrics is also covered. The objective is to close the link from technology and integration aspects to analog device performance. The associated trade-offs are outlined. On device level, the reduction of short channel effects is a major advantage of fully depleted multi-gate devices, resulting in beneficial output impedance, gain and matching behavior. Serious concerns related to high-k dielectrics are pronounced flicker noise and dynamic threshold voltage variations or hysteresis effects. A novel model of this new hysteresis effects suitable for analog circuit simulation is derived and verified with measurements.
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© 2010 Springer Science+Business Media B.V.
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Fulde, M. (2010). Analog Properties of Multi-Gate MOSFETs. In: Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies. Springer Series in Advanced Microelectronics, vol 28. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3280-5_2
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DOI: https://doi.org/10.1007/978-90-481-3280-5_2
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Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-3279-9
Online ISBN: 978-90-481-3280-5
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