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CVD Deposition of Binary AlSb and GaSb Material Films -- a Single-Source Approach

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Precursor Chemistry of Advanced Materials

Part of the book series: Topics in Organometallic Chemistry ((TOPORGAN,volume 9))

Abstract

The review summarizes recent studies on the synthesis of M-Sb compounds and their potential application to serve as single-source precursor in MOCVD processes. General reaction pathways for the synthesis of simple Lewis acid-base adducts R3M-ER′3 and heterocycles of the type [R2MSbR′2] x (M = Al,Ga,In) are described. As-formed compounds were studied in detail in MOCVD processes using hot-wall and cold-wall reactors. Advantages as well as problems using single-source precursors are described.

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Abbreviations

AFM:

atomic force microscopy

DSC:

differential scanning calorimetry

EDX:

energy-dispersive X-ray diffraction

EELS:

electron energy loss spectroscopy

Et:

ethyl

i-Pr:

iso-propyl

MOCVD:

metal organic chemical vapor deposition

SAED:

selected area electron diffraction

Me:

methyl

SEM:

scanning electron microscopy

t-Bu:

tertiary-butyl

TEM:

transmission electron microscopy

TGA/DTA:

combined thermogravimetry/differential thermal analysis

WDX:

wavelength-dispersive X-ray diffraction

XPS:

X-ray photoelectron spectroscopy

XRD:

X-ray diffraction

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Authors and Affiliations

  1. Department Chemie, Universität Paderborn, Warburger Str. 100, 33098, Paderborn, Germany

    Stephan Schulz

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  1. Stephan Schulz
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Correspondence to Stephan Schulz .

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Roland A. Fischer

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Schulz, S. CVD Deposition of Binary AlSb and GaSb Material Films -- a Single-Source Approach . In: Fischer, R.A. (eds) Precursor Chemistry of Advanced Materials. Topics in Organometallic Chemistry, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/b136144

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