Preparation and Optoelectronic Properties of CuI Films by Pulling and Chemical Vapor Deposition
Copper iodide (CuI) is a wide band gap semiconductor of I-VII group with excellent hole-transporting properties that has great potential uses in photoelectronic field. We present the preparation and optoelectronic properties of CuI films by pulling and chemical vapor deposition (CVD) methods. The former was deposited on ITO conductive glass substrate with the continuous pulling method, while the latter was grown on Si and quartz wafers by CVD deposition. The influences of deposition conditions on the structure, morphology and optoelectronic properties of CuI films have been studied using the measurement of X-ray diffraction (XRD), UV spectrophotometer and Hall Effect instrument. We found that the CuI films prepared by pulling 20 times or deposition 20 min have smooth surface morphology and good optoelectronic properties. Moreover, The CuI films prepared by CVD have better crystallinity, good current-voltage (I-V) property and stronger absorption in Ultraviolet band of light than that of CuI films by pulling method. Both CuI films have high absorptivity in ultraviolet band and high transmission in visible light range that show CuI film is more suitable as a window layer for solar cells to enhance the efficiency of solar cells.
KeywordsCuI Pulling method Chemical vapor deposition Morphology I-V property
This work is supported in parts by the National Natural Science Foundation of China (No. 31570515), the Scientific Project Program of Suzhou City (No. SYN201511) and the USTS Cooperative Innovation Center for Functional Oxide Films and Optical Information.
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